1999
DOI: 10.1002/(sici)1521-3862(199912)5:6<257::aid-cvde257>3.0.co;2-j
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CVD of Nanoporous Silica

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Cited by 6 publications
(1 citation statement)
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“…Further, after the 250 °C anneal, a small peak begins to develop at 1781 cm −1 , which is more indicative of a cyclic strained ester due to the increase in bond energy of the carbonyl peak. This peak is similar to the one found when parylene C was used as a sacrificial material to fabricate CVD nanoporous SiO 2 thin films 15. In that previous study, a peak at 1790 cm −1 was evident after oxidation at 300 °C for 30 min.…”
Section: Oxidation Of Parylene N and X As A Function Of Temperaturesupporting
confidence: 85%
“…Further, after the 250 °C anneal, a small peak begins to develop at 1781 cm −1 , which is more indicative of a cyclic strained ester due to the increase in bond energy of the carbonyl peak. This peak is similar to the one found when parylene C was used as a sacrificial material to fabricate CVD nanoporous SiO 2 thin films 15. In that previous study, a peak at 1790 cm −1 was evident after oxidation at 300 °C for 30 min.…”
Section: Oxidation Of Parylene N and X As A Function Of Temperaturesupporting
confidence: 85%