CVD of Copper from Cu(II) Precursors

Mechanism of copper chemical vapor deposition from copper dipivaloylmethanate in hydrogen

“…As reported by Lai et al [2] and Griffin and Haverick [3], the introduction of H(hfac) vapor into a system containing Cu(hfac) 2 reduces the deposition rate, which was interpreted as evidence that the rate of the process was limited by H(hfac) desorption from the substrate surface. According to Norman [6], significant H(hfac) additions slightly reduce the deposition rate of Cu from Cu(hfac)L, where L is a neutral organic ligand and the charge state of Cu is 1+.…”

“…Bykov et al [4] and Turgambaeva et al [5] analyzed the gaseous products of the heterogeneous decomposition of Cu(dpm) 2 vapor under dynamic vacuum at 250-550 ° C on the wall of a stainless-steel reactor covered with a copper film and the decomposition products of the complex. Using mass spectrometry, they identified a number of Cu-containing species: [ Cu ( dpm )-C ( CH 3 ) 3 ] + , [ Cu ( Hdpm )] + , [ Cu ( dpm ) 2 -2 C ( CH 3 ) 3 ] + , and [ Cu ( dpm ) 2 3 ] + ( III ), and [ H ( dpm )] + ( IV ). The signal intensities for II -IV in the mass spectrum were 40% relative to that for I (100%).…”

“…To gain detailed insight into the mechanisms of the reactions involved, it is necessary to examine the effect of the gaseous products of Cu(dpm) 2 decomposition on the kinetics of Cu deposition. Such an approach was used earlier [2,3] to investigate Cu deposition via decomposition of copper(II) hexafluoroacetylacetonate, Cu(hfac) 2 , in a hydrogen atmosphere. Bykov et al [4] and Turgambaeva et al [5] analyzed the gaseous products of the heterogeneous decomposition of Cu(dpm) 2 vapor under dynamic vacuum at 250-550 ° C on the wall of a stainless-steel reactor covered with a copper film and the decomposition products of the complex.…”

Effect of Reaction Products on the Kinetics of Copper Dipivaloylmethanate Reduction to Copper

“…The addition of H(dpm) was shown to reduce the apparent activation energy of the process to 10 ± 5 kJ/mol and to raise the deposition rate of Cu in the temperature range 250-310 ° C [3,4]. As reported by Griffin and Haverick [5], the introduction of H 2 O vapor into a system containing copper(II) hexafluoroacetylacetonate, Cu(hfac) 2 , accelerates the Cu deposition rate. Cu deposition from Cu(hfac)L, where L is a neutral ligand, in the presence of H 2 O was reported to enhance the adhesion between the film and substrate and to accelerate the deposition rate [6].…”

The preparation of Fe 2 O 3 -ZSM-5 catalysts by metal-organic chemical vapour deposition method for catalytic wet peroxide oxidation of m -cresol

“…Metal-organic chemical vapour deposition (MOCVD), in which metal species are deposited on supports through the gaseous metal precursor, has been widely used in the semiconductor [33]. Recently, it has been considered to be applied to the catalyst preparation, because MOCVD allows growing thin coating with a uniform thickness on some complex topographical surfaces at relatively low temperatures.…”