CVD material

Kaplan, D.

doi:10.1007/3-540-12807-7_19

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Cited by 4 publications

(2 citation statements)

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“…2140cm" 1 range [16], indicating low hydrogen content in these particles. A low hydrogen content at these particle growth temperatures is consistent with reports for lowhydrogen CVD <2-Si grown at similar temperatures [17].…”

Section: Resultssupporting

confidence: 89%

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In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes

Maslar¹,

Hurst²

2003

AIP Conference Proceedings

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Section: Resultssupporting

confidence: 89%

“…866 K. This transition temperature is in good agreement with a reported transition temperature of ca. 848 K for low pressure CVD materials [17].…”

Section: Resultsmentioning

confidence: 99%

In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes

Maslar¹,

Hurst²

2003

AIP Conference Proceedings

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High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Day

Sparks

et al. 2016

Advanced Materials

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Initial steps in the photochemical vapour deposition of amorphous silicon

Stafast¹

1988

Appl. Phys. A

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CVD material

Cited by 4 publications

References 38 publications

In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes

In Situ Optical Diagnostics of Silicon Chemical Vapor Deposition Gas-Phase Processes

High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

Initial steps in the photochemical vapour deposition of amorphous silicon

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