CVD Grown Cuprous Oxide Thin Film Based High Performance Chemiresistive Ammonia Gas Sensors

Jha, RM; Singh, Vajinder; Sinha, Jyoti; Avasthi, Sushobhan; Bhat, Navakanta

doi:10.1109/jsen.2019.2936223

Cited by 16 publications

(15 citation statements)

References 42 publications

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“…This device was probed inside a custom-built gas sensing set-up as reported earlier. 10 Commercial synthetic air (standard composition: N 2 ¼ 79%, and O 2 ¼ 21% by volume) was used to dilute analytes to obtain required concentration. It was also used to attain baseline of the device.…”

Section: Fabrication Of Gas Sensor and Their Sensing Measurementsmentioning

confidence: 99%

Ultrasonication assisted fabrication of a tungsten sulfide/tungstite heterostructure for ppb-level ammonia detection at room temperature

2020

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Section: Fabrication Of Gas Sensor and Their Sensing Measurementsmentioning

confidence: 99%

Ultrasonication assisted fabrication of a tungsten sulfide/tungstite heterostructure for ppb-level ammonia detection at room temperature

2020

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“…They are also inconsistent and not repeatable. 6,7 In comparison, MOS-based sensors are faster, more stable, simple, scalable, and CMOS-compatible. 4,8 Chemiresistive MOS sensors have been used to sense NO 2 in sub-ppm concentrations.…”

Section: Introductionmentioning

confidence: 99%

Growth-Temperature Dependent Unpassivated Oxygen Bonds Determine the Gas Sensing Abilities of Chemical Vapor Deposition-Grown CuO Thin Films

Nanda

Singh

Jha

et al. 2021

ACS Appl. Mater. Interfaces

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CuO is a multifunctional metal oxide excellent for chemiresistive gas sensors. In this work, we report CuO-based NO 2 sensors fabricated via chemical vapor deposition (CVD). CVD allows great control on composition, stoichiometry, impurity, roughness, and grain size of films. This endows sensors with high selectivity, responsivity, sensitivity, and repeatability, low hysteresis, and quick recovery. All these are achieved without the need of expensive and unscalable nanostructures, or heterojunctions, with a technologically mature CVD. Films deposited at very low temperatures (≤350 °C) are sensitive but slow due to traps and small grains. Films deposited at high temperatures (≥550 °C) are not hysteretic but suffer from low sensitivity and slow response due to lack of surface states. Films deposited at optimum temperatures (350−450 °C) combine the best aspects of both regimes to yield NO 2 sensors with a response of 300 % at 5 ppm, sensitivity limit of 300 ppb, hysteresis of <20%, repeatable performance, and recovery time of ∼1 min. The work demonstrates that CVD might be a more effective way to deposit oxide films for gas sensors.

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“…A big challenge for CuO CVD is the lack of a precursor with a clean decomposition profile that is also safe, cheap, and volatile. , The most popular precursor, copper(II) acetylacetonate or Cu(acac) 2 , − − is not volatile. So sublimation and deposition temperatures are high and deposition rates are very low. , According to previous reports, fluorinated β-diketonates , are volatile, but depositions are irreproducible; contaminated with fluorine; and the halide byproducts are corrosive .…”

Section: Introductionmentioning

confidence: 99%

Precursor to Gas Sensor: A Detailed Study of the Suitability of Copper Complexes as an MOCVD Precursor and their Application in Gas Sensing

et al. 2021

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There are very few p-type semiconductors available compared to n-type semiconductors for positive sensing response for oxidizing gases and other important electronic applications. Cupric oxide (CuO) is one of the few oxides that show p-type conductivity, useful for sensing oxidizing gases. Many researchers obtained CuO using the chemical and solid-state routes, but uniformity and large-area deposition have been the main issues. Chemical vapor deposition is one such technique that provides control on several deposition parameters, which allow obtaining thin films having crystallinity and uniformity over a large area for the desired application. However, CuO-chemical vapor deposition (CVD) is still unfathomed due to the lack of suitability of copper precursors based on vapor pressure, contamination, and toxicity. Here, to address these issues, we have taken four Cu complexes (copper(II) acetylacetonate, copper(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionato), copper(II) ethylacetoacetate, and copper(II) tert-butylacetoacetate), which are evaluated using thermogravimetry for suitability as a CVD precursor. The decomposition behavior of the complexes was also experimentally confirmed by depositing CuO thin films via CVD. Phase purity, decomposition, volatility, growth rate, and morphological characteristics of the films are investigated in detail. Analysis suggests that copper(II) tert-butylacetoacetate has the highest vapor pressure and growth rate at a low temperature, making it the most suitable precursor for high-throughput CVD. Further, to investigate the role of these precursors, films deposited using Cu complexes were subjected to gas sensing. The CuO gas sensor fabricated on glass shows pronounced NO2 sensing. The sensing results of CuO films have been explained from the standpoint of roughness, morphology, and unpassivated bonds present on the surface of films and vapor pressure of precursors. The higher density of surface state and the lower resistivity of the Cu(tbaoac)2 film lead to a sensor with higher responsivity and sensitivity (down to 1 ppm). These precursors can probably be utilized to improve the performance of other metal oxide gas sensors, especially Cu2O and Cu-III-O2.

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CVD Grown Cuprous Oxide Thin Film Based High Performance Chemiresistive Ammonia Gas Sensors

Cited by 16 publications

References 42 publications

Ultrasonication assisted fabrication of a tungsten sulfide/tungstite heterostructure for ppb-level ammonia detection at room temperature

Ultrasonication assisted fabrication of a tungsten sulfide/tungstite heterostructure for ppb-level ammonia detection at room temperature

Growth-Temperature Dependent Unpassivated Oxygen Bonds Determine the Gas Sensing Abilities of Chemical Vapor Deposition-Grown CuO Thin Films

Precursor to Gas Sensor: A Detailed Study of the Suitability of Copper Complexes as an MOCVD Precursor and their Application in Gas Sensing

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