CVD‐BN for Boron Diffusion in Si and Its Application to Si Devices

Hirayama, Makoto; Shohno, Katsufusa

doi:10.1149/1.2134107

Cited by 65 publications

(26 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The constant average resistivity corresponds to a constant boron surface concentration C~ ----2.7 • 1020 cm -3, which is obtained from Eq. [1] and is almost in agreement with the solid solubility reported by Vick and White (4). The total amount of boron diffusing into Si given by Eq.…”

supporting

confidence: 91%

See 1 more Smart Citation

Boron Diffusion into Si from CVD‐BN Covered with Si3 N 4 and Application to Master Slice p‐MOS IC

Shohno¹,

Kim

1980

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

A boron nitride (BN) film was deposited on an n-type Si wafer at about 500~ by the thermal reaction of diborane and ammonia in nitrogen. The boron diffusion into Si was performed in nonoxidizing ambients both during the deposition of the BN on the Si and the subsequent heat-treatment. To obtain the reproducibility of the boron surface concentration at its solid solubility at the diffusion temperature, the BN has to be covered with SigN4, which is deposited at about 750~ in a silane-ammonia-nitrogen system. No silicon-boride formation at the interface of the BN and Si was confirmed. The resistivity of the BN was determined as p --101a-1014 ~l-cm. The BN can be used not only as a boron diffusion source but also as a surface passivation of integrated circuits when the BN and Si3N4 remained after the boron diffusion.Boron diffusion into Si from CVD-BN films as a diffusion source was reported previously (1). The BN had been deposited in a hydrogen carrier gas at a high deposition temperature range of 700~176 When the BN was used in a practical integrated circuit process, the authors found that less reproducible boron surface concentrations were often observed due to the change of the BN during the boron diffusion heattreatment in nitrogen. In addition, the writers also found that the low temperature deposition of the BN at about 500~ in nitrogen and the over-coat deposition of SigN4 on the BN were effective in maintaining the reproducibility of the boron surface concentrations at its solid solubility.Fair summarized the boron diffusion into Si from various diffusion sources (2). When the boron surface concentration exceeds the intrinsic carrier concentration at a diffusion temperature, the effects of electric field enhancement caused by the increase of donortype vacancies have to be taken into account. Fair's analysis was employed in this work to determine the boron diffusion characteristics from BN in nonoxidizing ambients.In the final section of this report an application of the BN to master slice p-MOS IC is shown, in which the resistivity of the BN was determined, and the BN was used not only as a diffusion source of boron but also as a surface passivation when it remained after the boron diffusion. ExperimentalThe experimental apparatus for the BN and Si3N~ deposition has been described previously (1). A quartz reaction chamber used in this work had an internal width of 35 mm, a height of 20 mm, and a length of 400 mm. The reactant gases used for the BN deposition were high purity diborane (B2H6) diluted to 5% in nitrogen and ammonia (NHs), and those gases for the Si3N4 deposition were high purity silane (SiH4) diluted to 5% in nitrogen and ammonia. The carrier gas was high purity nitrogen.First, the BN was deposited on the n-type (100) Si wafer with a resistivity of 3-5 f~-cm (ND = 0.9-1.5 • 1015 cm-~). The deposition conditions were: (i) a wafer temperature of 500~ and (ii) flow rates of the B2H6-N2, the NI-I3, and the N2 carrier gases of 50, 70, and 2000 cm3/min, respectively. Under those conditions * Electroc...

show abstract

supporting

confidence: 91%

“…The experimental apparatus for the BN and Si3N~ deposition has been described previously (1). A quartz reaction chamber used in this work had an internal width of 35 mm, a height of 20 mm, and a length of 400 mm.…”

Section: Methodsmentioning

confidence: 99%

Boron Diffusion into Si from CVD‐BN Covered with Si3 N 4 and Application to Master Slice p‐MOS IC

Shohno¹,

Kim

1980

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…There have been numerous reports of the dielectric constants of these materials being less than or approaching that of SiO 2 (see Table I). [2][3][4][5][6][7][8][9][10][11] Despite the low dielectric constants, these films are not suitable as interlevel dielectrics due to thermal or environmental degradation. At temperatures above -300'C, hydrogen comes out of DLC resulting in the 13 while c-BN is an environmentally stable bulk ceramic.…”

Section: Introductionmentioning

confidence: 99%

Evaluation Of Amorphous Diamond-Like Carbon And Boron Nitride Films As Low Permittivity Dielectrics

et al. 1995

View full text Add to dashboard Cite

Although films of diamond-like carbon (DLC) and hexagonal boron nitride (h-BN) have shown low dielectric constants in the range of 3 to 4, these materials have been unsuitable for use as interconnect dielectrics due to poor thermal stability and environmental degradation. These deficiencies can be addressed by depositing DLC films free of hydrogen (a-tC) and depositing the cubic phase of BN (c-BN). The dielectric characteristics of hydrogen-free DLC and c-BN that have been deposited by pulsed-laser deposition (PLD) have been evaluated using metal-insulator-metal and metal-insulator-semiconductor structures. For comparison, the dielectric characteristics of h-BN deposited by electron cyclotron resonance (ECR) were also evaluated. Despite the superior thermal and environmental stability of the a-tC and c-BN films and the attractively low deposition thermal budget (room temperature deposition for a-tC films, 400'C for c-BN films), the films exhibit dielectric constants comparable to those of bulk diamond and bulk BN, -6. Furthermore, the a-tC and c-BN films exhibit high compressive stress in the GPa range which limits their usefulness only to those applications requiring a thin dielectric layer, e.g. diffusion barriers or encapsulants.

show abstract

“…The literature reveals several studies to deposit sp 2 -BN on silicon substrates by thermal CVD. Depositions performed below 1000 °C on Si, with several boron precursors such as diborane (B2H6) [18][19][20][21][22][23] , decaborane (14) (B10H14) 24 , triethylboron (TEB, B(C2H5)3) 25 and ammonia (NH3) or with single-source precursors such as ammonia-borane (H3NBH3) 10 and B-trichloroborazine (B3Cl3N3H3) 26 resulted in growth of amorphous BN. Turbostratic BN (t-BN) films was reported at 800 °C from borazine (B3N3H6) 27 , at 980 °C from N-trimethyl borazine (B3H3N3(CH3)3) 28 and at 1200 °C using TEB 25 or BCl3 29 .…”

Section: Introductionmentioning

confidence: 99%

“…Turbostratic BN (t-BN) films was reported at 800 °C from borazine (B3N3H6) 27 , at 980 °C from N-trimethyl borazine (B3H3N3(CH3)3) 28 and at 1200 °C using TEB 25 or BCl3 29 . Polycrystalline films were deposited from B2H6 and NH3 at 1200 °C on Si(100) 19 and nanocrystalline films from TEB and NH3 on Si(111) at 1350 °C 5 . Comparing to growth on SiC and α-Al2O3, the need for surface pre-treatment of Si substrates is still an open question and therefore a suitable subject for investigation.…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

Souqui

Pedersen

Högberg

2020

Preprint

View full text Add to dashboard Cite

Thin films of the sp2-hybridized polytypes of boron nitride are interesting materials for several electronic applications such as UV-devices. Deposition of epitaxial sp2-BN films has been demonstrated on several technologically important semiconductor substrates such as SiC and Al2O3 and where controlled thin film growth on Si would be beneficial for integration of sp2-BN in many electronic device systems. We investigate growth of BN films on Si(111) by chemical vapor deposition from triethylboron B(C2H5)3 and ammonia NH3 at 1300 °C with focus on treatments of the Si(111) surface by nitridation, carbidization and nitridation followed by carbidization prior to BN growth. Fourier transform infrared spectroscopy shows that the BN films deposited exhibit sp2 bonding. X-ray diffraction reveals that the sp2-BN films predominantly grow amorphous on untreated and pre-treated Si(111), but with diffraction data showing that turbostratic BN can be deposited on Si(111) when the formation of Si3N4 is avoided. We accomplish this condition by a nitridation procedure in a deposition chamber where BxC had previously been deposited at high temperature, but where the synthesis route needs to be further developed for a better process control.

show abstract

CVD‐BN for Boron Diffusion in Si and Its Application to Si Devices

Cited by 65 publications

References 12 publications

Boron Diffusion into Si from CVD‐BN Covered with Si3 N 4 and Application to Master Slice p‐MOS IC

Boron Diffusion into Si from CVD‐BN Covered with Si3 N 4 and Application to Master Slice p‐MOS IC

Evaluation Of Amorphous Diamond-Like Carbon And Boron Nitride Films As Low Permittivity Dielectrics

Chemical Vapor Deposition of Sp2-Boron Nitride on Si(111) Substrates from Triethylboron and Ammonia: Effect of Surface Treatments

Contact Info

Product

Resources

About