2022
DOI: 10.1039/d2tc03420d
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CuSCN as a hole transport layer in an inorganic solution-processed planar Sb2S3solar cell, enabling carbon-based and semitransparent photovoltaics

Abstract: Sb2S3 is an emerging inorganic photovoltaic absorber material with attractive properties such as high absorption coefficient, stability, earth-abundance, non-toxicity, and low-temperature solution processability. Furthermore, with a bandgap of ca. 1.7...

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Cited by 7 publications
(10 citation statements)
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“…The efficiencies remained lower than 2% for planar Sb 2 S 3 solar cells with CuSCN as the HTL layer . In comparison, those using Spiro-OMeTAD as HTL have achieved a PCE of 8% .…”
Section: Introductionmentioning
confidence: 89%
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“…The efficiencies remained lower than 2% for planar Sb 2 S 3 solar cells with CuSCN as the HTL layer . In comparison, those using Spiro-OMeTAD as HTL have achieved a PCE of 8% .…”
Section: Introductionmentioning
confidence: 89%
“…The coated films were rinsed in distilled water and annealed in a tube furnace in argon at 350 °C (ramp rate 10 °C per min) for 10 min . CuSCN was spin-coated from a diethyl sulfide at 4000 rotations per min (rpm) and dried at 90 °C for 10 min, following our previous report . Au top contact was sputtered using a compact sputter coater (Leica EM ACE200) and the device area was defined by a laser-cut metal mask with an area of 9 mm 2 .…”
Section: Experimental Sectionmentioning
confidence: 99%
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“…Moreover, dewetting , and tuning of the precursor chemistry ,, must be addressed. In broad terms, the cutting-edge development of Sb 2 S 3 solar cells has split into three main directions: maximizing solar cell efficiency for standalone applications, maximizing the ratio of solar cell efficiency to absorber thickness targeting sustainable exploitation of antimony, a critical raw material, and development of semitransparent devices for use in building-integrated PVs or as the top cell in two-cell tandem PVs. , Further understanding in these directions depends on first-principles calculations and defect engineering studies.…”
Section: Introductionmentioning
confidence: 99%
“…However, the chemical incompatibility existing at the Sb 2 (S, Se) 3 /oxide interface induces the high density of undercoordinated/dangling bonds at the interface, which in turn accelerates the (trap-assisted) interface recombination, and contributes to a significant loss in the device performance (particularly in V oc ). , This chemical incompatibility has often been ignored in most of the simulation works on Sb 2 (S, Se) 3 PV and is the primary reason for the PCE values claimed by previous simulation works not aligning well with the experiments. Bearing this fact in mind, we have restrained from using oxide-based ETL and HTL materials in this simulation work. ETL and HTL materials based on chalcogenides (e.g., ZnSe, MoS 2 , WS 2 , CuSbS 2 , and MnS), halides (e.g., CuI), or thiocyanates (e.g., CuSCN) coordinate strongly with Sb 2 (S, Se) 3 , facilitating an efficient charge transport across the Sb 2 (S, Se) 3 /ETL and Sb 2 (S, Se) 3 /HTL interfaces. , Recently, there has been growing interest and surge in experimental investigations to find alternatives for the CdS and Spiro-OMeTAD layer. In particular, MnS has shown promising results as an HTL in Sb 2 (S, Se) 3 devices.…”
Section: Introductionmentioning
confidence: 99%