An active-photonic-crystal ͑APC͒ laser based on laterally resonant arrays of antiguides is proposed and demonstrated. Approximately 1-m-wide, high-index APC sites are obtained by preferential etching and GaAs regrowth into a GaAs/ InGaP / AlGaAs base structure. For 4-m-wide, low-index APC sites ϳ0.28-m-thick regrowths provide resonant leaky-wave coupling across a 100-m-wide aperture ͑i.e., across a 20-element APC structure͒ at 0.98 m vacuum wavelength. Large intermodal discrimination favoring in-phase mode operation to high drive levels is obtained at and around the in-phase mode resonance by introducing significant nonsaturatable losses in the high-index sites. The lateral-resonance condition is controlled during fabrication via small variations in the preferential-regrowths thickness on several pieces from the same wafer base. Virtually single-lobe, near-diffraction-limited beam operation is obtained up to 1.1 W peak power at 11 times threshold. This also represents the demonstration of the lateral component needed for the realization of two-dimensional ͑2D͒ grating surface-emitting, single-mode APC lasers. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2180443͔Resonant antiguided laser arrays ͓so-called resonantoptical-waveguide ͑ROW͒ arrays͔ 1,2 have demonstrated operation in near-diffraction-limited beams to watt-range powers in both pulsed 3 and continuos-wave ͑CW͒ regimes. 4 The ROW array was shown more than a decade ago 5 to be analogous to a second-order distributed feedback ͑DFB͒ structure in the lateral propagation direction, for which the Bragg condition is exactly satisfied and the modes are band-edge solutions. Periodic gain modulation selects operation in a large, single spatial mode. Thus the ROW array was the first activephotonic-crystal ͑APC͒ structure for ͑lateral͒ spatial-mode selection and control in large-aperture ͑ജ100 m͒ semiconductor diode lasers. The analogy to DFB structures was further extended 6 by deriving the equations for the lateral-wave amplitudes, which are found to be identical to the wellknown coupled-wave equations in DFB-laser theory 7 since, at and near the resonance condition, the reflectance of a lateral wave from one cell of the APC structure is quite small. 6,8 Unlike the vast majority of one-dimensional ͑1D͒ APC devices, for ROW arrays the gain is preferentially enhanced on the low-index crystal sites, 1,2,9 which in turn favors lasing of only the leaky-wave modes of the periodic structure.Conventional ROW arrays have p-cladding layer thicknesses of typical values: 1 -1.5 m. High-͑effective͒-index interelement regions are formed by burying n-GaAs islands deep inside the p-cladding layers, in close proximity to the active region. Thus one cannot insure during the device fabrication that the lateral resonance condition will be fulfilled.Here we present a different type of ROW-array structure. Compared to conventional devices, it has a thinner p-cladding layer ͑only 0.4 m compared to 1.5 m͒ and the high-index GaAs islands are formed by regrowth into the device top...