Curve tracer with a personal computer and LabView

Moreno-García, E.

doi:10.1109/icecc.2004.1269573

Cited by 6 publications

(7 citation statements)

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“…However, the trace circuit is slightly different [24,27]. This section studies a bipolar transistor (BJT) and a field effect transistor (FET) as a DUT.…”

Section: Output Characteristic Measurement Of Low Power Devicesmentioning

confidence: 99%

“…In the case that V CE exceeds ±10V an attenuator is needed. In addition, an amplifier should be added to the tracer circuit [24,27] to provide voltage source more than 10V for V CC.…”

Section: Principle Of Operation and Measurement Set Upmentioning

confidence: 99%

“…Therefore, a family of I-V characterization curves is generated. For each set of these curves, one of the activation ports is considered as a variable parameter and the other one is used as a common point [24]. Figure…”

Section: Introductionmentioning

confidence: 99%

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Development of a Device Characterization Curve Tracer for High Power Application

Nejad¹

2023

Preprint

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Due to self-heating and significant temperature rise in a power device junction, the device characterization through the DC measurement is a major issue. Short pulsed technique or Pulsed I-V (PIV) characterization is the technique which is used by commercial curve tracer and network analyzers to characterize the power devices. Although, this technique prevent excessive self-heating but doesn't guarantee that measurement will be operated in the desired accuracy range because even a moderate self heating may cause significant measurement error. In this research work, a measurement technique is introduced that results "device characterization within the desired accuracy range". The technique is based on the stimulation of the device under test (DUT) with voltage ramps that allow for "fast transient mesurement". Because, this way of stimulation excites the parasitic impedances in the DUT, a dynamic model of the DUT is presented. This model allows determining the operation conditions that "guarantee the specified measurement accuracy". The measurement procedure is described and the developed measurement algorithms are implemented in LabVIEW environment to obtain a "PC-based device characterization curve tracer for high power application". A high current power MOSFET is used as the DUT. The calibration and measurement phases are carried out by the developed curve tracer. During the calibration phase, the measurement condition including allowed junction temperature deviation, maximum ramp slope and maximum allowed drain-source voltage to "guarantee 2% measurement error" is specified. The measurement phase is carried out based on these operating conditions. The result is a family of output I-V curves for different gate voltage set. This measurement technique "validated" with that of measured based on the PIV characterization technique from the device data sheet. The discrepancy between the measurement result and datasheet curve is discussed.

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“…However, the trace circuit is slightly different [24,27]. This section studies a bipolar transistor (BJT) and a field effect transistor (FET) as a DUT.…”

Section: Output Characteristic Measurement Of Low Power Devicesmentioning

confidence: 99%

“…In the case that V CE exceeds ±10V an attenuator is needed. In addition, an amplifier should be added to the tracer circuit [24,27] to provide voltage source more than 10V for V CC.…”

Section: Principle Of Operation and Measurement Set Upmentioning

confidence: 99%

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Development of a Device Characterization Curve Tracer for High Power Application

Nejad¹

2023

Preprint

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“…Alat ini memungkinkan pengguna untuk mengamati dan mempelajari hubungan antara tegangan input dan arus output transistor pada berbagai kondisi operasional. Dengan menggunakan Transistor Curve Tracer, karakteristik dasar seperti karakteristik DC, karakteristik frekuensi tinggi, hingga karakteristik pulsa dapat diamati dan dianalisis dengan mudah [1]- [3].…”

Section: Pendahuluanunclassified

Studi Desain dan Implementasi Transistor Curve Tracer untuk Analisis Karakteristik Transistor

Sungkono,

Kamajaya,

Fitri

et al. 2023

ELK

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Grafik karakteristik transistor menunjukkan hubungan antara arus basis kolektor dan tegangan emitter kolektor. Informasi tersebut dimanfaatkan untuk menentukan penguatan transistor, titik saturasi, dan titik cutoff. Pengukuran manual di laboratorium untuk mendapatkan grafik karakteristik transistor membutuhkan waktu yang lama karena analis diharuskan mengendalikan banyak instrumen pada saat yang sama. Akibatnya, alat khusus diperlukan untuk secara otomatis mengukur grafik dengan pengaturan tes yang dapat diubah dan memvisualisasikan hasil tes. Dalam studi ini, mereka membahas bagaimana membangun pelacak kurva menggunakan Source Measure Unit (SMU) dan mikrokontroler arsitektur ARM untuk mengontrol output dan menangkap data dengan cepat. Interface pelacak kurva dikembangkan pada komputer menggunakan aplikasi LabVIEW untuk menentukan pengaturan tes dan menyajikan visualisasi grafis dari hasil tes. Ketepatan output tegangan dari SMU adalah 0.01% dan ketepatannya output saat ini adalah 0.35%. Akurasi karakteristik transistor pada pelacak kurva dibandingkan dengan osiloskop adalah 2.48%.

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“…The application overall diagram is shown in Figure 6 . Except the shown measuring and control loop, the following program blocks in the initialization section [ 8 , 9 ]: InitSW - software initialization, 428W - the board initialization, AssignIO - the Input/Output definition, HWInit - hardware function preparing, Slot - slot address defining, Address - address within slots choice, AOConf - output channel configuration, Channel - number of channels, Module - module number and Range - voltage range are used.…”

Section: Softwarementioning

confidence: 99%

Hardware and Software of a Bipolar Current Source Controlled by PC

Milivojević

Stević

Rajčić-Vujasinović

2008

Sensors

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This paper describes a realization of a bipolar current source developed by the paper's authors. The source is intended for use in galvanic and other industrial plants, where a pulse-reverse current supply (with the desired shape in time) is required. A prototype of the device, which provides the outcome current intensity up to ± 50 A, has been constructed. The hardware of the source consists of a Pentium IV PC, a commercial ADDA converter, an interface of authors' original construction as well as a current regulator. The application software is developed using a commercial packet LabView as the basis.

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Curve tracer with a personal computer and LabView

Cited by 6 publications

References 0 publications

Development of a Device Characterization Curve Tracer for High Power Application

Development of a Device Characterization Curve Tracer for High Power Application

Studi Desain dan Implementasi Transistor Curve Tracer untuk Analisis Karakteristik Transistor

Hardware and Software of a Bipolar Current Source Controlled by PC

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