Current–voltage characteristics of silicon PIN diodes irradiated in KAMINI nuclear reactor

Parida, Manoj Kumar; Sundari, S. Tripura; Sathiamoorthy, V.; Sivakumar, S.

doi:10.1016/j.nima.2018.07.014

Cited by 17 publications

(10 citation statements)

References 28 publications

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“…Hence, the effect of gamma radiation on the structural, optical and electrical properties of various organic thin films and semiconductor electronics was widely investigated. Previous studies have found that when the samples are exposed to ionizing radiation, their structural, optical and electrical properties are altered [10][11][12][13][14][15][16][17][18] . Thus, the radiation response of the material must be thoroughly investigated before the material is exposed to a harsh radiation environment, specifically for flexible space-borne electronic applications.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of TIPS Pentacene Thin Film Exposed to Gamma Radiation

et al. 2022

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This study investigates the effects of Gamma-irradiation on the structural, morphological and optical properties of 3,16-bis(tri isopropyl silylethynyl)pentacene (TIPS Pentacene) organic semiconductor films. The TIPS Pentacene thin films were irradiated at 10 to 300 kGy at a dose rate of 1.58 kGy/hr. The films were characterized using X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM) and Ultraviolet-Visible Spectroscopy (UV-Vis). The XRD analysis showed that the pre-irradiated thin films were of crystalline structure, indicating a broad wave diagram. The XRD and AFM results show that these variations can be attributed to the radiation-induced local heating and microscopic atomic mobility. Based on the UV-Vis results, the thin films exhibit approximately 70% optical transmittance in the visible region at pre-irradiation. At post-irradiation, optical transmittance decreased to 55% at the maximum absorbed dose. The corresponding optical bandgap decreased from 1.87 to 1.50 eV after a total ionizing dose of 300 kGy. The findings showed that TIPS Pentacene thin film has good mitigation towards gamma irradiation and can withstand harsh radiation while retaining its semiconductor properties. It is a potential candidate for flexible electronics for space applications.

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Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of TIPS Pentacene Thin Film Exposed to Gamma Radiation

et al. 2022

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“…In general, the shape of the IV-characteristics resembles that of a radiation-treated diode, where traps govern the electrical characteristics of the diode. [41,42] Being produced by ion implantation of the p+ and n+ regions, it is reasonable to expect that this effect is originating from traps produced by the ion implant process. Particularly SiC is known to be rich of ion implant-induced defects, which are not fully removed by annealing.…”

Section: Resultsmentioning

confidence: 99%

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes

Okeil,

Erlbacher,

Wachutka

2024

Adv Elect Materials

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In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation‐induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV‐characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

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“…Therefore, the ohmic behaviour observed for the doped diode suggests that the introduction of Zn in n-type Si also creates defects that are positioned at the centres (~056 eV) of the bandgap. The diodes fabricated on the material with high density of mid-gap defects are resistant to radiation damage [14][15]17] since the Fermi energy is independent of the incident radiation [18]. The density of Zn-induced mid-gap defects is, however, insufficient to have Zndoped n-Si diode completely ohmic, the trends for forward current and reverse current are not equal for the whole voltage range.…”

Section: Diodesmentioning

confidence: 99%

“…Zn was implanted onto the polished side of Si samples at 160 keV energy and fluence of 1.0 10 17 ion cm 2 . The energy of 160 keV and fluence of 1.0 10 17 ion cm -2 is the maximum achievable setting of the set-up and they were adopted to induce as many defects as possible deep in Si [17,18]. Prior to the ion implantation, Stopping and Range of Ions in Matter (SRIM) 2013 simulations coded with the Transport of Ions into Matter (TRIM) program were used to predict the projected range and maximum implantation depth of 117.8 nm and 250 nm, respectively in Si.…”

Section: Sample Preparationmentioning

confidence: 99%

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

Oeba

Bodunrin

Moloi

2022

Preprint

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The electrical properties of diodes fabricated on undoped and zinc-doped n-silicon were investigated in this study using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) techniques. The diode’s forward current decreased by a factor of ~ 3, while the reverse current increased by a factor of ~ 37, confirming that the charge carrier recombination/ compensation is due to the generation of minority carrier to increase the resistivity of the material upon doping with zinc (Zn). The generation of the minority carrier was confirmed by inversion of the material conductivity form n- to p-type, as shown by C-V results. Furthermore, the findings reveal that Zn is responsible for a reduction in full depletion voltage (FDV), implying that the space charge region (SCR) width can be fully depleted with a relatively low applied voltage. For the manufacturing of sensitive radiation detectors, a low FDV is critical. A change in the electrical properties of the diode was explained in terms of defects induced in the Si bulk by Zn. The properties of Zn-doped n-Si-based diodes are similar to those of radiation-hard Si devices. In general, the findings suggest that Zn might be employed as a possible dopant in a study to improve the characteristics of Si to fabricate radiation-hard and sensitive detectors for current and future high energy physics experiments.

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Current–voltage characteristics of silicon PIN diodes irradiated in KAMINI nuclear reactor

Cited by 17 publications

References 28 publications

Structural and Optical Properties of TIPS Pentacene Thin Film Exposed to Gamma Radiation

Structural and Optical Properties of TIPS Pentacene Thin Film Exposed to Gamma Radiation

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes

Effects of zinc doping on current-voltage and capacitance-voltage-frequency characteristics of n-silicon Schottky diode

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