Current–voltage characteristics of Schottky barrier structures on porous silicon, and effect of an organic stabilizer film

Abstract

The stability and reproducibility of current–voltage curves of Schottky barrier structures on particular porous silicon surfaces used for obtaining electroluminescence is greatly improved by first coating the surface with a conducting polymer, poly-4-dicyanomethylene-4H-cyclopenta [2,1-b:3,4-b′] dithiophene. With such coated structures it is possible to fit the usual diode formula at room temperatures with a quality factor of 3.0, obviating the need for more complex theories. The stability of electroluminescence, which shows a redshift from 500 to 580 nm after coating, is also greatly improved. The coating appears to chemically react with the hydride surface and also mechanically strengthens the structure.

Photodetectors based on porous silicon produced by Ag-assisted electroless etching

“…(1) cannot be applied. In this case, several authors have concluded that the assumption that the current was simply limited by surface Schottky barrier effects was not correct [12,[14][15][16][17]. Then, tunneling mechanisms and carrier diffusion effects were proposed [12,17].…”

“…In the literature, there is a considerable divergence of results as well as of interpretation of current-voltage (I-V) characteristics of metal contact on porous silicon layers [12]. In the beginning, attempts were made to explain the observed rectifying effects in terms of a Schottky barrier under the metal contact.…”

“…The electric field becomes more intense in these features and therefore, it favours their breakdown. Generally, metal/PS/Si/Structures show a very high series resistance [12]. Consequently, the classic method to extract the diode parameters (n, R s , etc.)…”

Electrical transport through array of electrochemically etched silicon nanorods

“…The nature of the I – V characteristics may alter depending on the contact metals , annealing temperature , surface passivation , thickness , and orientation of the nanostructures. A plethora of conflicting mechanisms have been discussed to explain the electrical transport mechanisms through a disordered array of Si nanostructures, namely band conduction , Pool–Frenkel (PF) emission , trap‐assisted tunneling (TAT) , trap‐controlled space charge limited conduction (TCSCLC) , Fowler Nordheim (FN) tunneling , thermionic emission, thermally activated hopping , variable range hopping , inter‐crystal hopping , Schottky barrier , etc. Besides the switching operation , other fundamental and important features, like very high switching speed (sub‐ns), excellent memory characteristics, ultra low power consumption and most importantly, compatibility with the existing Si technology, makes Si‐SiO x ‐based RRAM potential candidate for next generation memory device.…”

Fluorescence quenching in porous silicon/conjugated polymer composites

“…In order to improve luminescence properties of PS, capping it with organic molecules has been proposed 10–15. It was expected that such composites would combine different characteristics of both components and would help to overcome the mentioned drawbacks.…”