Current-Voltage Characteristic and Shot Noise of Shift Current Photovoltaics

Morimoto, Takahiro; Nakamura, Masao; Kawasaki, Masashi; Nagaosa, Naoto

doi:10.1103/physrevlett.121.267401

Cited by 42 publications

(26 citation statements)

References 31 publications

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“…This photovoltaic effect is ascribed to shift current (5)(6)(7)(8)(9)(10)(11)(12)(13)(14). Note that a similar insensitivity is seen in nonlocalized devices as well, in which the slope of current-voltage curve sensitively changes by changing temperature, while the zero-voltage photocurrent remains nearly temperature-independent (15); the insensitivity to the relaxation time is consistent with a recent theory (16). This experiment indicates the robustness of the photovoltaic current against the disorder.…”

supporting

confidence: 87%

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Theory of bulk photovoltaic effect in Anderson insulator

Ishizuka

Nagaosa

2021

Proc. Natl. Acad. Sci. U.S.A.

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The localization of wavefunction by disorder makes a conductive material an insulator with vanishing conductivity at zero temperature. A similar outcome is expected for the photocurrent in semiconductor p-n junctions because the photoexcited carriers cannot drift through the device. In contrast, we here show numerically that the bulk photovoltaic effect—the photovoltaic effect in noncentrosymmetric bulk materials—occurs in a noncentrosymmetric, disordered, one-dimensional insulator where all eigenstates are localized. We find this photocurrent remains, even when the energy scale of random potential is larger than the bandwidth. On the other hand, the photocurrent decays exponentially when the excitation is local, i.e., when only a part of the device is illuminated. The photocurrent also vanishes if the relaxation occurs only by contact with the electrodes. Our result implies that the ratio of the photovoltaic current and the direct current by the variable-range hopping increases with decreasing temperature. These results suggest a route to design high-efficiency solar cells and photodetectors.

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confidence: 87%

“…However, it offers a glimpse into the distinct features that the driven current shows. In contrast, theoretical studies on the impurity effects in the bulk photovoltaic effect mainly focus on the cases with extended Bloch waves, such as relaxation time dependence (16) and impurity-mediated photovoltaic effect (21)(22)(23)(24)(25).…”

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confidence: 99%

Theory of bulk photovoltaic effect in Anderson insulator

Ishizuka

Nagaosa

2021

Proc. Natl. Acad. Sci. U.S.A.

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“…In crystals without inversion centers, polarized light can generate DC photocurrent and second-harmonic dipoles in the material [24][25][26][29][30][31][32][33][34][35][36][37]. In contrast to the photovoltaic effect in p-n junctions, the photovoltaic effect induced by polarized light is dependent solely on the bulk band structure and is not limited by the band gap.…”

Section: Symmetry and Microscopic Analysismentioning

confidence: 99%

Optical method to detect the relationship between chirality of reciprocal space chiral multifold fermions and real space chiral crystals

Sun

Zhang

et al. 2020

Phys. Rev. B

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The chirality of chiral multifold fermions in reciprocal space is related to the chirality of crystal lattice structures in real space. In this study, we propose a strategy to detect and identify multifold fermions of opposite chirality in nonmagnetic systems using second-order optical transports. Chiral crystals related with inversion operations cannot be made to overlap with each other via any experimental operation. Further, chiral multifold fermions within such crystals host opposite chiralities corresponding to a given k point. A change in chirality is indicated by a corresponding change in the sign of the second-order charge current dominated by chiral fermions. This property can be exploited to study the relationship between chiralities in reciprocal and real spaces by utilizing bulk transport.

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“…Currently, the exploration is extended to topological WSMs [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39]. For WSMs, the conduction band and the valence band form Weyl points in the bulk, around which all the geometric quantities become divergent, and the topological surface Fermi arc state appears on the boundaries [40,41].…”

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Bulk-Fermi-Arc Transition Induced Large Photogalvanic Effect in Weyl Semimetals

Cao¹,

Wang²,

Yu³

et al. 2021

Preprint

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The surface Fermi arc, as a hallmark of Weyl semimetals (WSMs), has been well known in current research, but it remains a challenge to unveil novel phenomena associated with the Fermi arc. Here, we predict a heretofore unrecognized process in WSMs, namely, the photoinduced transition between the bulk states and the Fermi arc. We find this process is significant and can lead to a large effective three-dimensional shift current on the boundaries with the Fermi arc in wide terahertz range. Moreover, due to the low symmetry of the boundaries, the surface photogalvanic effect predicted here can appear in a large class of WSMs that do not have bulk shift current. Hence, our work not only unveils a hidden photogalvanic effect in WSMs but also suggests that all the WSMs are promising material candidates for developing efficient terahertz photodetectors.

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Current-Voltage Characteristic and Shot Noise of Shift Current Photovoltaics

Cited by 42 publications

References 31 publications

Theory of bulk photovoltaic effect in Anderson insulator

Theory of bulk photovoltaic effect in Anderson insulator

Optical method to detect the relationship between chirality of reciprocal space chiral multifold fermions and real space chiral crystals

Bulk-Fermi-Arc Transition Induced Large Photogalvanic Effect in Weyl Semimetals

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