Current Transport Mechanisms in <i>N</i>-Type Ultrananocrystalline Diamond/<i>P</i>-Type Si Heterojunctions

Zkria, Abdelrahman; Shaban, Mahmoud; Hanada, Takanori; Promros, Nathaporn; Yoshitake, Tsuyoshi

doi:10.1166/jnn.2016.13663

Cited by 10 publications

(9 citation statements)

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“…The activation energy, obtained from the slope of the linear fit in the Arrhenius plot, was determined to be 41 meV. This value is in good consistent with those for the nitrogen-doped UNCD films reported in the literature [32], [33], which is strongly influenced by nitrogen quantity incorporated in the UNCD films. Moreover, the latter value was increased by raising the measurement temperature to be in the range of 50-150 meV [34], [35].…”

Section: B Device Characterizationsupporting

confidence: 86%

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

2021

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Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon (UNCD/a-C:H) composite films, grown on Si substrates by the coaxial arc plasma gun, were investigated using temperature-dependent impedance spectroscopy. The measurements were carried out in frequency and temperature ranges of 100 Hz-2 MHz and 300-400 K, respectively. Structurally, the nitrogen incorporation into the deposited films as well as sp 2 /sp 3 ratio was studied by X-ray photoemission spectroscopy (XPS), measured with synchrotron radiation. The results of temperature-dependent electrical conductance characterization of the examined films revealed that the heterogeneous structure possesses a low-frequency conduction mechanism with an activation energy of 46 meV. This possibly originated from charge carriers hopping in the deposited composite. Furthermore, the results manifested a relaxation process, with an activation energy of 41 meV, originated from space charges in grain boundaries of the films. Cole-Cole plots of measured and fitted impedance spectra exhibited equivalent resistance due to grain boundaries that are much smaller than that related to UNCD grains. This is owing to the nitrogen incorporated in the composite film inside the grain boundaries instead of the grains. This increases the concentration of charge carriers within the grain boundaries and therefore enhances their conductivity. Moreover, the deduced capacitance corresponding to grain boundaries was larger than that originated from the UNCD grains. This is due to the difference between the grain-size and grain-boundary width of the UNCD/a-C:H composite.INDEX TERMS Nitrogen-doping; Coaxial arc plasma gun; Complex impedance spectroscopy, nanodiamond grains; grain boundaries.

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Section: B Device Characterizationsupporting

confidence: 86%

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

2021

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“…Also, from the computation of the , this parameter increased at low temperatures. This might be attributable to the low mobility of carriers in the -FeSi 2 thin films, which degrades at low temperatures [36].…”

Section: Resultsmentioning

confidence: 99%

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Sittimart

Nopparuchikun

Promros

2017

Advances in Materials Science and Engineering

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In this study, n-type -FeSi 2 /p-type Si heterojunctions, inside which n-type -FeSi 2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560 ∘ C and Ar pressure of 2.66 × 10 −1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung's and Norde's methods. Computation using the TE theory showed that the values of ideality factor ( ) were 1.71 at 300 K and 16.83 at 20 K, while the barrier height ( ) values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the and values computed using the TE theory were in agreement with those computed using Cheung's and Norde's methods. The values of series resistance ( ) computed at 300 K and 20 K by Norde's method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the values found through computation by Cheung's method. The dramatic increment of value at low temperatures was likely attributable to the increment of value at low temperatures.

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“…Although UNCD/a-C:H:N films are mainly grown by the chemical vapor deposition (CVD) method [8,9], the authors have previously grown them by coaxial arc plasma (CAPD) [10] and pulsed laser deposition (PLD) [11]. In our previous works, we studied n-type (UNCD/a-C:H:N)/p-type Si HJDs by the CAPD method [12][13][14]. The fabricated diode exhibited a rectifying action with 10 4 rectification ratio in the bias range ±1 V. Additionally, the Pd/n-(UNCD/a-C:H:N)/p-Si photodiodes showed a capability of deep ultraviolet light detection under the 254 nm monochromatic light [14,15].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Zkria

Abubakr

Sittimart

et al. 2020

Journal of Nanomaterials

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Diamond films are candidate for a wide range of applications, due to their wide band gap, high thermal conductivity, and chemical stability. In this report, diamond-based heterojunction diodes (HJDs) were fabricated by growing n-type nanocarbon composite in the form of nitrogen-doped ultrananocrystalline diamond/amorphous carbon (UNCD/a-C:H:N) films onto p-type Si substrates. X-ray photoemission and the Fourier transform infrared spectroscopies were employed to examine the contribution of nitrogen atoms from the gas phase into the deposited films. The results indicate the incorporation of nitrogen atoms into the grain boundaries of UNCD/a-C:H film by replacing hydrogen atoms. The capacitance- (C-V-f), conductance- (G/ω-V-f), and series resistance-voltage characteristics of the fabricated Pd/n-(UNCD/a-C:H:N)/p-Si HJDs were studied in the frequency range of 40 kHz-2 MHz. The existence of interface states (Nss) and series resistance (Rs) were attributed to the interruption of the periodic lattice structure at the surface of the fabricated junction as well as the defects on the (UNCD/a-C:H:N)/Si interface. By increasing the frequency (≥500 kHz), the Nss reveals an almost frequency-independent behavior, which indicates that the charges at the interface states cannot follow ac signal at higher frequency. The obtained results demonstrated that the UNCD/a-C:H:N is a promising n-type semiconductor for diamond-based heterostructure diodes.

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Current Transport Mechanisms in N-Type Ultrananocrystalline Diamond/P-Type Si Heterojunctions

Cited by 10 publications

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Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

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Current Transport Mechanisms in N-Type Ultrananocrystalline Diamond/P-Type Si Heterojunctions

Cited by 10 publications

References 0 publications

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

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Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering