Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures

Chand, Subhash; Kumar, Jitendra

doi:10.1007/bf01567646

Cited by 61 publications

(95 citation statements)

References 24 publications

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“…As the doping concentration of n-Si is 10 15 cm −3 , we can safely rule out direct tunneling, as the calculated width of the depletion layer, W d (>1 µm) is too large at RT 15 . For a better understanding of the transport characteristics, we also perform temperature dependence of I-V for both diodes.…”

Section: Resultsmentioning

confidence: 94%

Temperature dependent transport characteristics of graphene/n-Si diodes

Parui

Ruiter

Zomer

et al. 2014

Journal of Applied Physics

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Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current (<10 −10 A) and rectification of more than 10 6 . We extract Schottky barrier height of 0.69 eV for the exfoliated graphene and 0.83 eV for the CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and Güttler.

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Section: Resultsmentioning

confidence: 94%

Temperature dependent transport characteristics of graphene/n-Si diodes

Parui

Ruiter

Zomer

et al. 2014

Journal of Applied Physics

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“…The deviation from the TE model observed in the I-V characteristics could be quantitatively explained by the TE mechanism with a Gaussian distribution of the Barrier heights [24]. Hence, we investigated temperature-dependent I-V measurements on Pd/ZnO SBD in the 30-300 K temperature range and determined the Richardson constant that is closer to the theoretical value n-ZnO using the modified plot.…”

Section: Introductionmentioning

confidence: 95%

“…where and are the apparent ideality factor and apparent barrier height at zero bias, respectively, given by [24,28], (10) and…”

Section: Barrier Height Inhomogeneitiesmentioning

confidence: 99%

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Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Mayimele

Diale

Mtangi

et al. 2015

Materials Science in Semiconductor Processing

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We report on a systematic investigation of temperature dependent current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes in the 30-300 K temperature range. The ideality factor was observed to decrease with increase in temperature, whilst the barrier height increases with increase in temperature. The observed trend has been attributed to barrier inhomogeneities, which results in a distribution of barrier heights at the interface.

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“…Contaminants due to undesirable reaction products at the MS interface may act directly to introduce inhomogeneties or they may simply promote inhomogeneity through the generation of defects [8]. Schottky diodes with low SBH have found applications in devices operating at cryogenic temperatures as infrared detectors and sensors in thermal imaging [9,10,11,12]. Therefore, analysis of I-V characteristics of Schottky diodes at room temperature only does not give detailed information about their conduction process or the nature of barrier formation at the MS interface.…”

Section: Introductionmentioning

confidence: 99%

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Chawanda

Mtangi

Auret

et al. 2012

Physica B: Condensed Matter

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The variation in electrical characteristics of Au/n-Ge (100) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V ) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero- . This may be due to greater inhomogeneities at the interface.

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Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures

Cited by 61 publications

References 24 publications

Temperature dependent transport characteristics of graphene/n-Si diodes

Temperature dependent transport characteristics of graphene/n-Si diodes

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

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