Current status of quantum well focal plane arrays

Infrared Physics & Technology

2002

681

343

The paper presents progress in infrared (IR) detector technologies during 200 history of their development. Classification of two types of IR detectors (photon detectors and thermal detectors) is done on the basis of their principle of operation. The overview of IR systems and detectors is presented. Also recent progress in different IR technologies is described. Discussion is focused mainly on current and the most rapidly developing detectors: HgCdTe heterostructure photodiodes, quantum well AlGaAs/GaAs photoresistors, and thermal detectors. The outlook for near-future trends in IR technologies is also presented. Ó

Section: Dual-band Ir Focal Plane Arraysmentioning

confidence: 99%

Infrared detectors: an overview

Infrared Physics & Technology

2002

681

343

“…Assuming that the temperature derivative of the background flux can be written to a good approximation as 3Qhc (13) T XkT and using Eq. (5), theNEDT under these conditions is equal to 2kT2X NEDT= B (14) hcj2N…”

Section: Qwips Versus Hgcdte Photodiodes In Lwir Spectral Rangementioning

confidence: 99%

Competition of infrared detector technologies

2003

SPIE Proceedings

Performance limits of infrared photon and thermal detectors are presented. Due to fundamental different types of noise, these two classes of detectors have different dependencies of detectivities on wavelength and temperature. Special attention is put on competition of QWIP5 and HgCdTe photodiodes in long wavelength infrared spectral region. Final part of the paper is devoted to uncooled two-dimensional arrays of thermal detectors. Two most important detection mechanisms, namely, resistive bolometer and pyroelectric detectors are considered. The development of outstanding technical achievements in uncooled thermal imaging is also presented.

“…Assuming a non-degenerate statistic, the Auger generation rate is equal to (11) 2'c1 2'c7 2t1 'y where n and p are the electron and hole concentrations, t and are the intrinsic Auger 1 and Auger 7 recombination times and y is the ratio of Auger 7 an Auger 1 intrinsic recombination times. Assuming a non-degenerate statistic, the Auger generation rate is equal to (11) 2'c1 2'c7 2t1 'y where n and p are the electron and hole concentrations, t and are the intrinsic Auger 1 and Auger 7 recombination times and y is the ratio of Auger 7 an Auger 1 intrinsic recombination times.…”

Section: Fundamental Limitationsmentioning

confidence: 99%

<title>Comparison of the performance of quantum well and conventional bulk infrared photodetectors</title>

Ciupa

1997

SPIE Proceedings

Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared detectors are presented. Two types of QWIPs are considered: GaAs/A1GaAs intersubband quantum well photoconductors and type II staggered InAs/InGaSb photodiodes. In comparative studies the HgCdTe photoconductors and photodiodes, PbSnTe photodiodes, Schottky barrier photoemissive detectors and doped silicon detectors are considered. HgCdTe photodiodes indicate better performance in comparison with GaAs/A1GaAs QWIPs operated in the range 35to 77 K. The cooling requirements for GaAs/A1GaAs QWIPs with cutoff wavelengths below 10 tm are less stringent in comparison with extrinsic detectors and Schottky barrier devices. The theoretically predicted performance of long wavelength InAs/GaInSb photodiodes are comparable with HgCdTe photodiodes.