Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA

O'Bryan, Martha V.; LaBel, Kenneth A.; Pellish, Jonathan A.; Chen, Dakai; Lauenstein, Jean-Marie; Marshall, C.J.; Ladbury, Ray; Oldham, T.R.; Kim, Hak S.; Phan, Anthony M.; Berg, Melanie D.; Carts, M.A.; Sanders, Anthony B.; Büchner, S.; Marshall, P.W.; Xapsos, M.A.; Irom, F.; Pearce, L. G.; Thomson, E. T.; Bernard, T. M.; Satterfield, H. W.; Williams, Alan P.; Vonno, N. W. van; Salzman, James; Burns, Sam; Albarian, Rafi

doi:10.1109/redw.2010.5619494

Cited by 13 publications

(2 citation statements)

References 18 publications

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“…SEE mechanisms are becoming less severe in terms of survivability of the device but more widespread due to the physical (3-D) stacking of the bare chips. Heavy ion induced SEE such as single event transient, single event upset, single event functional interrupt, or single event latchup (SEL) are of major concern [25]. NAND soft errors are confirmed to be minimal compared to the controller because NAND has a low soft error rate that can be handled by the strong error-correction code.…”

Section: B Failure Mechanism Analysismentioning

confidence: 99%

A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application

et al. 2019

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This paper develops a competing risk model to simultaneously analyze censored catastrophic failures and nonlinear degradation data of the NAND-based solid-state drives for space application. Two dominant failure modes are the hard failure of the controller due to single-event latch-up (SEL) and the soft failure of the NAND Flash manifesting as random write current degradation. As hard failure probability increases with radiation intensity and particle number, we establish the inverse power law-Weibull model for SEL cross section to model the accelerated censored data. The hard failure model is presented based on the invariance principle of total environmental particles' energy. On the other hand, soft degradation is described by the nonlinear Wiener-process-based accelerated degradation test model. Specifically, the temporal variability concerning the inherent variability of the degradation process over time and the unit-to-unit variability in degradation rates are both taken into account. Then, we derive the reliability functions and other quantities of interest under normal conditions with the assumption of independence of failure modes. Furthermore, to estimate the unknown parameters in the competing risk model, the transformed extreme value regression analysis other than the least square fitting method is adapted to issue the problem of data uncertainty of hard failures, whereas the maximum likelihood estimation method is developed for soft failures. Finally, a detailed simulation example is given to illustrate the procedure of the proposed reliability model with a sensitivity analysis.

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Section: B Failure Mechanism Analysismentioning

confidence: 99%

A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application

et al. 2019

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“…Over the past several years, GSFGC and other institutions have been discussing the susceptibility of Schottky diodes to destructive (and nondestructive) single-event effects (SEEs) [1][2][3][4][5]. During the course of this work, four responses were observed in the diodes during the heavy-ion irradiations, and they are shown below (Figs.…”

Section: Introductionmentioning

confidence: 99%

Failure Analysis of Heavy Ion-Irradiated Schottky Diodes

Casey¹,

Lauenstein²,

Weachock

et al. 2018

IEEE Trans. Nucl. Sci.

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When a Schottky diode experiences enough degradation to cause the post-irradiation electrical parameter measurements to be out of specification, failure analysis appears to show that the damage occurs solely at the Schottky metal/silicon interface. This is in contrast to when a diode fails catastrophically. In that case, the event appears to also begin at the metal/silicon junction, however, the event generates such extreme heat that the materials become molten. A filament is then created that displaces the metal into the bulk silicon and can also displace silicon to the surface of the diode. This filament shorts the anode (bulk silicon) to the cathode (Schottky barrier metal) and the current is only limited by the power supply.To avoid these radiation responses in which the diode is operating outside of the manufacturer's specifications, a reverse voltage derating of 50% is recommended when testing will not be conducted. If testing will be conducted on the flight diodes under the application-specific bias conditions, then a derating similar to power MOSFETs is recommended, in which the maximum reverse voltage that may be used is 75% of the last passing voltage.In this work, we use high-and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

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Scrubbing with partial side information for radiation-tolerant memory

Hwang

Jeon

Negi

et al. 2010

2010 IEEE Globecom Workshops

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Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA

Abstract: Abstract-We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Cited by 13 publications

References 18 publications

A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application

A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application

Failure Analysis of Heavy Ion-Irradiated Schottky Diodes

Scrubbing with partial side information for radiation-tolerant memory

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