1991
DOI: 10.1109/72.80331
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Current-mode subthreshold MOS circuits for analog VLSI neural systems

Abstract: An overview of the current-mode approach for designing analog VLSI neural systems in subthreshold CMOS technology is presented. Emphasis is given to design techniques at the device level using the current-controlled current conveyor and the translinear principle. Circuits for associative memory and silicon retina systems are used as examples. The design methodology and how it relates to actual biological microcircuits are discussed.

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Cited by 283 publications
(80 citation statements)
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“…Local disturbance can potentially result in large variations [4]. There are three types of local disturbances across the die : random variations, edge eects and striation eects.…”
Section: Local Disturbancementioning
confidence: 99%
“…Local disturbance can potentially result in large variations [4]. There are three types of local disturbances across the die : random variations, edge eects and striation eects.…”
Section: Local Disturbancementioning
confidence: 99%
“…Even in low-power applications where MOS devices are mostly biased in subthreshold regime, current-mode circuits exhibit a good power-speed performance [19]- [21].…”
Section: B Power Scalable Analog Circuitsmentioning
confidence: 99%
“…The integration (INT) block uses another instance of the DPI circuit to integrate the error current over time, producing the I ie current. The proportional (PROP) block uses a translinear multiplier [18] to multiply the I error current by constant scaling factors set by V np and V dp , producing the I pe current. The control circuit acts on the V thr bias voltage, which can be connected globally to all DPI synapses afferent to the neuron, to scale their outputs via the I g current.…”
Section: Analog Vlsi Implementation Of the Homeostatic Control Amentioning
confidence: 99%