Current mechanism in SbSeI crystals based on phonon‐assisted tunnelling emission

Abstract

Single crystals of SbSeI were grown by the vapour phase technique. Reverse current -voltage (I-V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon-assisted electron tunnelling from the local levels in the metal -crystal interface to the conduction band. Calculated values: electron -phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability.

Growth of bismuth- and antimony-based chalcohalide single crystals by the physical vapor transport method

“…S2 †). Besides, the size of SbSeI is determined by temperature and pressure, 27 and, thus, it introduces much more difficulty for single crystal growth compared with BiSeI. A previous study has reported that SbSeI was grown by the vapor-phase method, but the size was limited (15 × 2 × 2 mm 3 ).…”

“…A previous study has reported that SbSeI was grown by the vapor-phase method, but the size was limited (15 × 2 × 2 mm 3 ). 27 For the large-size SbSeI crystal growth, the temperature was finally set to 350 °C and 370 °C for the growth and source zones, respectively. 26 × 1 × 0.2 mm 3 single crystals were successfully obtained, as shown in Fig.…”

INVESTIGATION OF ELECTRONIC PROPERTIES OF SbSeI UNDER HIGH PRESSURE BY FIRST PRINCIPLES CALCULATIONS

“…Many studies have been carried out on the electrical conductivity [13], electronic, thermoelectric [11], microelectronic, and optoelectronic [1] properties, reflectivity and vibrational spectrum [18] of SbSeI. SbSel's single crystals were grown using the vapor phase technique and the reverse current -voltage (I -V) characteristics of the system were analyzed in the 273 to 363 K temperature range [10]. The structural, elastic, electronic [14] lattice dynamical and thermodynamic [15] properties of SbSeI investigated in the ambient pressure.…”