Current Loop Gate Driver Circuit for Pulsed Power Supply based on Semiconductor Switches

Ryoo, Hong-Je; Kim, J. S.; Rim, Geun-Hie; Sytykh, D.; Goussev, G.

doi:10.1109/ppps.2007.4346249

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…However, this suggested method increases the system cost and complexity as the number of solid-state switches increases. Therefore, the current loop gate-driving method is suggested [19]. It provides many advantages such as unnecessary requirement of independent power source for gate driver, simple and reliable protection, and ease in controlling the pulse width.…”

Section: E Gate Driver Circuit and A Control Loopmentioning

confidence: 99%

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Ryoo²,

Jang³

et al. 2012

IEEE Trans. Plasma Sci.

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This paper deals with the detailed design of a pulsed power modulator using insulated gate bipolar transistor (IGBT) switches for industrial applications. Output specifications of the proposed modulator are as follows: variable output pulse voltage 1 ∼ 40 kV; pulse width 0.5 ∼ 5 μs; maximum pulse repetition rates 3 kHz, and average output power of 13 kW. The proposed pulsed power modulator consists of a high-voltage capacitor charger based on a high-efficiency resonant inverter and pulse generator part including a series of connected 24 pieces power cells. To verify the proposed design, PSpice modeling was performed. Finally, experimental results proved the reliability and robustness of the proposed solid-state pulsed power modulator.

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Section: E Gate Driver Circuit and A Control Loopmentioning

confidence: 99%

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Ryoo²,

Jang³

et al. 2012

IEEE Trans. Plasma Sci.

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show abstract

“…In fact, the design is generally carried out as a trade-off between the LF saturation avoidance feature and HF dynamic constraints in the driver. Other solutions based on symmetrical onoff pulses that avoid saturation [26]- [29] will not allow for a full duty ratio range, nor for a continuous on-off operation.…”

Section: Introductionmentioning

confidence: 99%

Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

Garcia

Saeed

Gurpinar

et al. 2019

IEEE Trans. on Ind. Applicat.

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A novel implementation of an isolated gate driver for power switches is proposed in this work. The driver is bespoke designed for SiC power MOSFETs. The proposal achieves the main driver characteristicsisolation capability, gate switching command and power transfer to the secondary side-by using a unique magnetic transformer. The resulting simple circuitry enables the integration of the driver into the power cell, achieving theoretical higher power density values of the final system. The principle of operation of the driver is described in detail. The original PWM signal is modulated with a pure AC square waveform under a two-level modulation scheme, that guarantees no saturation of the magnetic core. The signal is then magnetically coupled to the secondary side, where it is rectified and reconstructed to effectively drive the target device. In addition, the steps needed to provide a suitable design taking into account the parameters of the target power switch are also detailed. The resulting driver is characterized and a prototype of the driver is built and tested. The main results of the driver performance on a SiC MOSFET based prototype are presented. Based on the analysis of these results, this work demonstrates experimentally the feasibility of the proposal.

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Self-supplied isolated gate driver for SiC power MOSFETs based on bi-level modulation scheme

Garcia

Gurpinar

Castellazi

2017

2017 IEEE Energy Conversion Congress and Exposition (ECCE)

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Current Loop Gate Driver Circuit for Pulsed Power Supply based on Semiconductor Switches

Cited by 9 publications

References 6 publications

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

Self-supplied isolated gate driver for SiC power MOSFETs based on bi-level modulation scheme

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