Current injection induced terahertz emission from 4H-SiC p-n junctions

Andrianov, A. V.; Gupta, J. P.; Kolodzey, J.; Sankin, V. I.; Zakhar’in, A. O.; Vasilyev, Yu. B.

doi:10.1063/1.4832824

Cited by 19 publications

(31 citation statements)

References 16 publications

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“…Such systems are of great demand in biomedical and security applications, remote materials quality control, etc. [1] The solid state electrically pumped THz sources such as p-type Ge lasers, [2,3] quantum cascade lasers, [4][5][6] shallow impurity electroluminescence lasers, [7][8][9] plasma wave emitters, [10][11][12] and 4H-SiC p-n junctions [13] are under research and development.…”

Section: Introductionmentioning

confidence: 99%

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

Grigelionis

Jakštas

Janonis

et al. 2018

Physica Status Solidi (b)

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In this work terahertz (THz) electroluminescence of shallow impurities in AlGaN/GaN high electron mobility transitor (HEMT) structures are studied at temperatures above 80 K. The samples are excited with electric field pulses of up to 300 V cm−1 and duration of normalτp=1.6 ms. The THz emission spectra are measured in vacuumed environment by means of infrared Fourier transform spectroscopy. Resonant 1s − 2p electron transitions in energy levels of residual oxygen and silicon impurities are observed at temperatures above 80 K. A comparison of the area under the shallow impurities electroluminescence signal correlates with the growth conditions of the AlGaN/GaN heterostructures. In such a way a method to monitor the ratio between ionized shallow impurities in unintentionally doped AlGaN/GaN HEMT structures in the THz frequency range is proposed. In addition, the resonant electroluminescence signals are found intermixed with the THz emission caused by the hot electron transitions from conduction band to shallow donors as well as the black‐body radiation of heated AlGaN/GaN HEMT channel. It is found that the temperature increase of the conductive channel greatly suppressed the electroluminescence signal. Therefore, a proper cooling of the sample should be provided in advance.

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Section: Introductionmentioning

confidence: 99%

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

Grigelionis

Jakštas

Janonis

et al. 2018

Physica Status Solidi (b)

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“…Despite a number of interesting applications were found in this way [5], [6], this version had some disadvantage: the whole construction inevitably contains matrix components of SuperHamiltonian, and their interpretation is not always obvious. For the lowest (two-dimensional) space dimensionality, the alternative way to use SUSY ideas was elaborated [2], [3], [7]. Namely, the standard SUSY algebra with three elements -Super-Hamiltonian H and two supercharges Q ± -was generalized as follows:…”

mentioning

confidence: 99%

“…of (2) is replaced here by some diagonal fourth order operator R, which generally speaking is not reduced to a polynomial of H. The relations (1) correspond to SUSY intertwining relations and they just provide the isospectrality of components of the SuperHamiltonian. This approach to two-dimensional Quantum Mechanics with operators Q ± of second order was developed in a series of papers [7]. Briefly, the main results of study of two-dimensional systems by means of second order SUSY approach are the following.…”

mentioning

confidence: 99%

“…Though the general solution of intertwining relations can not be constructed, a wide class of solutions, i.e. of Hamiltonians and supercharges, was built explicitly [7] due to suitable choice of ansatzes. All these Hamiltonians possess the symmetry operators of fourth order in momenta, thereby being completely integrable.…”

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confidence: 99%

“…they are reducible to a pair of one-dimensional problems. In the present paper we expand the method of second order interwining [7] to the systems beyond the Euclidean metric: the case of Minkowski plane will be considered. From the very beginning we are mainly interested in models which do not allow the conventional separation of variables (even in R−separation form [15]).…”

mentioning

confidence: 99%

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Solution of second order supersymmetrical intertwining relations in Minkowski plane

Ioffe

Kolevatova

Nishnianidze

2016

Journal of Mathematical Physics

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Supersymmetrical (SUSY) intertwining relations are generalized to the case of quantum Hamiltonians in Minkowski space. For intertwining operators (supercharges) of second order in derivatives the intertwined Hamiltonians correspond to completely integrable systems with the symmetry operators of fourth order in momenta. In terms of components, the itertwining relations correspond to the system of nonlinear differential equations which are solvable with the simplest -constant -ansatzes for the "metric" matrix in second order part of the supercharges. The corresponding potentials are built explicitly both for diagonalizable and nondiagonalizable form of "metric" matrices, and their properties are discussed.

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Terahertz Luminescence Induced by Intra‐Exciton Radiative Transitions in Silicon

Andrianov

Zakhar’in

2019

Physica Status Solidi (b)

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This article reports the results of experimental investigations of a new type of terahertz emission from semiconductors. This emission is due to radiative transitions between energy levels of free excitons. The intra-exciton radiative transitions arise during the binding of nonequilibrium electrons and holes into exciton states. The experiments were carried out on high-purity Si crystals at helium temperatures in the conditions of interband photoexcitation. The excitation densities were in the range of 0.1 to 140 W cm À2 . Terahertz luminescence spectra demonstrate narrow lines of optical transitions between the energy levels of free excitons. The intra-exciton optical transitions dominate the emission spectrum under conditions of both low excitation densities and at excitation densities well above the electron-hole liquid formation threshold. The intra-exciton terahertz emission intensity becomes superlinear as a function of the excitation density at a high level of the photoexcitation and temperatures above 20-25 K. This experimental observation could be explained by stimulated optical transitions between the energy levels of free excitons, which presumably appear under intense interband pumping.

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Current injection induced terahertz emission from 4H-SiC p-n junctions

Cited by 19 publications

References 16 publications

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K

Solution of second order supersymmetrical intertwining relations in Minkowski plane

Terahertz Luminescence Induced by Intra‐Exciton Radiative Transitions in Silicon

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