Current injection from a metal to a disordered hopping system. III. Comparison between experiment and Monte Carlo simulation

Barth, S.; Wolf, U.; Bäßler, H.; Müller, P.; Riel, Heike; Vestweber, H.; Seidler, Paul; Rieß, W.

doi:10.1103/physrevb.60.8791

Cited by 108 publications

(77 citation statements)

References 25 publications

(29 reference statements)

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“…Temperature, disorder, applied field, and interface dipoles influence the transport of carriers across a MO interface [32][33][34][35][36][37]. Other variables are sample preparation technique, and time [38].…”

Section: Discussionmentioning

confidence: 99%

Metal–organic interfaces at the nanoscale

et al. 2004

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In this work, we present an investigation of the Ag-PPP (polyparaphenylene) interface using ballistic electron emission microscopy. Our work is the first successful application of the BEEM technique to metal-organic interfaces. We observe nanometer scale injection inhomogeneities. They have an electronic origin, since we find corresponding Schottky barrier variations. We also determine the transmission function of Ag-PPP interface and find that it agrees qualitatively with the theoretical calculations for a metalphenyl ring interface. We conclude that charge transport across inhomogeneous barriers needs to be considered for understanding electronic transport across metal-organic interfaces and organic device characteristics.

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Section: Discussionmentioning

confidence: 99%

Metal–organic interfaces at the nanoscale

et al. 2004

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“…8) assumes that an electron from the contact can be injected into the dielectric once it has acquired sufficient thermal energy to cross the potential maximum resulting from the superposition of the external and the image-charge potential. [186,207] However, if the SAM has structural imperfections (such as defects or impurity ions), these defect states can act as electron traps. Thermally excited trapped electrons will contribute to the current density according to Poole-Frenkel emission (Eq.…”

Section: Thermally Activated Processesmentioning

confidence: 99%

“…McCreery [144] associated hopping with nuclear motion (or molecular reorganization), and Bässler and co-workers [186][187][188] proposed that hopping occurs among large defects or impurities. Whatever the origin of the hopping, it is observed much less frequently in SAMs than is tunneling because the typical lengths of the molecules investigated are seldom greater than $2 nm.…”

Section: Thermally Activated Processesmentioning

confidence: 99%

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

DiBenedetto¹,

Facchetti²,

Ratner³

et al. 2009

Advanced Materials

570

544

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Principal goals in organic thin‐film transistor (OTFT) gate dielectric research include achieving: (i) low gate leakage currents and good chemical/thermal stability, (ii) minimized interface trap state densities to maximize charge transport efficiency, (iii) compatibility with both p‐ and n‐ channel organic semiconductors, (iv) enhanced capacitance to lower OTFT operating voltages, and (v) efficient fabrication via solution‐phase processing methods. In this Review, we focus on a prominent class of alternative gate dielectric materials: self‐assembled monolayers (SAMs) and multilayers (SAMTs) of organic molecules having good insulating properties and large capacitance values, requisite properties for addressing these challenges. We first describe the formation and properties of SAMs on various surfaces (metals and oxides), followed by a discussion of fundamental factors governing charge transport through SAMs. The last section focuses on the roles that SAMs and SAMTs play in OTFTs, such as surface treatments, gate dielectrics, and finally as the semiconductor layer in ultra‐thin OTFTs.

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“…The J-V characteristic of device B at negative voltage in Fig. 3(c) showed quite good straight line in plot of ln J vs V 1/2 at À0.3-À1.0 V. This straight line relation indicates that the conduction mechanism is Richardson-Schottky (RS) thermionic emission, 26 which is a kind of injection limited current. On the other hand, the J-V curve of device C at À0.01-À1.0 V in Fig.…”

Section: -mentioning

confidence: 87%

Inkjet printed silver nanowire network as top electrode for semi-transparent organic photovoltaic devices

Lü

Lin

et al. 2015

Applied Physics Letters

122

105

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A method for direct inkjet printing of silver nanowire (Ag NW) to form transparent conductive network as the top electrode for inverted semi-transparent organic photovoltaic devices (OPV) was developed. The highest power conversion efficiency of the poly(3-hexylthiophene):phenyl-C61–butyric acid methyl ester (P3HT:PC61BM) based OPV was achieved to be 2.71% when the top electrode was formed by 7 times of printing. In general, devices with printed Ag NW top electrode had similar open-circuit voltage (VOC, around 0.60 V) but lower fill factor (FF, 0.33–0.54) than that of device with thermally deposited Ag opaque electrode (reference device). Both FF and short-circuit current density (JSC), however, were found to be increasing with the increase of printing times (3, 5, and 7), which could be partially attributed to the improved conductivity of Ag NW network electrodes. The solvent effect on device performances was studied carefully by comparing the current density-voltage (J-V) curves of different devices. The results revealed that solvent treatment on the anode buffer layer during printing led to a decrease of charge injection selectivity and an increase of charge recombination at the anode interface, which was considered to be the reason for the degrading of device performance.

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Current injection from a metal to a disordered hopping system. III. Comparison between experiment and Monte Carlo simulation

Cited by 108 publications

References 25 publications

Metal–organic interfaces at the nanoscale

Metal–organic interfaces at the nanoscale

Molecular Self‐Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin‐Film Transistor Applications

Inkjet printed silver nanowire network as top electrode for semi-transparent organic photovoltaic devices

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