Current-injected light emission of epitaxially grown InAs/InP quantum dots on directly bonded InP/Si substrate

Abstract

Current-injected light emission was confirmed for metal organic vapor phase epitaxy (MOVPE) grown (Ga)InAs/InP quantum dots (QDs) on directly bonded InP/Si substrate. The InP/Si substrate was prepared by directly bonding of InP thin film and a Si substrate using a wet-etching and annealing process. A p-i-n LED structure including Stranski-Krastanov (Ga)InAs/InP QDs was grown by MOVPE on an InP/Si substrate. No debonding between Si substrate and InP layer was observed, even after MOVPE growth and operation of the device under continuous wave conditions at RT. The photoluminescence, current/voltage, and electroluminescence characteristics of the device grown on the InP/Si substrate were compared with reference grown on an InP substrate.

III–V Light-Emitting Diodes on Silicon by Hydrogel-Mediated Wafer Bonding

“…The bonding technique is able to form heterostructures of dissimilar semiconductor materials with high crystalline qualities, while the conventional epitaxial growth method inevitably generates substantial levels of defect densities due to crystalline lattice mismatches [20][21][22][23]. Therefore, wafer bonding is a promising scheme for high-performance semiconductor optoelectronics, and has been employed in the fabrication of a variety of devices such as light-emitting diodes [1,2,4,5,24], lasers [7,8,[25][26][27], photodetectors [28,29], and solar cells [25,[30][31][32][33][34]. Hydrogel-mediated semiconductor wafer bonding is an emerging technique for heterogeneous materials integration, simultaneously forming interfaces with high mechanical stability, electrical conductivity, optical transparency, and surface-roughness tolerance [35].…”

“…Installation and integration of III-V compound semiconductor light-source components such as light-emitting diodes (LEDs) [1][2][3][4][5] and laser diodes [6][7][8][9][10][11] on Si is of a significant importance in the field of optoelectronics. Semiconductor wafer bonding [12][13][14][15][16][17][18][19] is a versatile fabrication method, widely used in optoelectronics.…”

Graphene-Quantum-Dot-Mediated Semiconductor Bonding: A Route to Optoelectronic Double Heterostructures and Wavelength-Converting Interfaces

“…C 2020, 6, 28 2 of 10 Thus, semiconductor bonding is a promising technique for realizing high-performance semiconductor optoelectronics. Hence, it is employed in the fabrication of a variety of devices, such as light-emitting diodes [24,25], lasers [4,26,27], photodetectors [28,29], and solar cells [27,30,31]. In the present study, we fabricate a Si/GQD/Si double heterostructure via semiconductor wafer bonding, towards the realization of high-efficiency nano-optoelectronic devices.…”

GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N2 plasma-activated bonding

“…18,19) Recently, by using low-loss Si waveguides and ring resonators as an external cavity, tunable lasers that exhibit a sub mode suppression ratio (SMSR) of more than 45 dB across a tunable wavelength range of 54 nm, an SMSR of more than 29 dB across a tunable range of 99 nm, and a linewidth of less than 15 kHz across the C-band have been realized. [20][21][22] Various III-V=Si hybrid devices fabricated by heterogeneous integration, such as hydrophilic bonding, [23][24][25] hydrophobic bonding, 26,27) metal bonding, 28,29) oxygen-plasmaassisted bonding, [30][31][32][33][34] adhesive bonding, [35][36][37][38] and flip-chip assembly, 22,39) have been reported. Our group has also reported distributed feedback (DFB) lasers with wirelike active regions, prepared by hydrophilic bonding.…”