Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

Luengo-Kovac, Marta; Huang, Simon; Gaudio, Davide Del; Occena, Jordan; Goldman, R. S.; Raimondi, Roberto; Sih, Vanessa

doi:10.1103/physrevb.96.195206

Cited by 6 publications

(10 citation statements)

References 22 publications

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“…As a result, the spin polarization is no longer parallel to the spin-orbit field, depending on the relative strength of the linear and cubic couplings. This feature agrees with recent experiments [1,2]. In general, the approach developed in this paper can both lead to a better understanding of the spin transport in semiconductors and to a finding of efficient operational regimes of spintronics devices.…”

Section: Discussionsupporting

confidence: 90%

“…However, the experimental results of Refs. [1,2] showed the opposite behavior: the maximum spin polarization occurs in correspondence of the minimum value of the internal field and vice versa. Based on the model developed in Refs.…”

Section: Introductionmentioning

confidence: 94%

“…[19,20], a possible explanation has been proposed in Ref. [2], by allowing SOC also from random impurities (see also Refs. [21,22]).…”

Section: Introductionmentioning

confidence: 98%

“…We demonstrate that the unusual experimental results of Refs. [1,2], can be explained by taking into account this cubic SOC. Indeed, the steady current-induced spin density is controlled by the balancing of the spingeneration and spin-relaxation torques.…”

Section: Introductionmentioning

confidence: 99%

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Theory of the inverse spin galvanic effect in quantum wells

et al. 2018

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The understanding of the fundamentals of spin and charge densities and currents interconversion by spin-orbit coupling can enable efficient applications beyond the possibilities offered by conventional electronics. For this purpose we consider various forms of the frequency-dependent inverse spin galvanic effect (ISGE) in semiconductor quantum wells and epilayers taking into account the cubic in the electron momentum spin-orbit coupling in the Rashba and Dresselhaus forms, concentrating on the current-induced spin polarization (CISP). We find that including the cubic terms qualitatively explains recent findings of the CISP in InGaAs epilayers being the strongest if the internal spin-orbit coupling field is the smallest and vice versa [1,2], in contrast to the common understanding. Our results provide a promising framework for the control of spin transport in future spintronics devices.

show abstract

Section: Discussionsupporting

confidence: 90%

Section: Introductionmentioning

confidence: 94%

“…[19,20], a possible explanation has been proposed in Ref. [2], by allowing SOC also from random impurities (see also Refs. [21,22]).…”

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Theory of the inverse spin galvanic effect in quantum wells

et al. 2018

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“…Therefore, the asymmetry caused by the surface electric field cannot be excluded. Moreover, some studies contend that the CISP in doped GaAs is derived from the extrinsic mechanism [ 27 ]. Therefore, to confirm the mechanism of CISP in GaAs materials, further experiments are indispensable.…”

Section: Discussionmentioning

confidence: 99%

Current-Induced Spin Photocurrent in GaAs at Room Temperature

Zhang

Xue

et al. 2022

Sensors

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Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

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Current-Induced Spin Polarization in Nonmagnetic Semiconductors

Yang

Flatté

2018

J Supercond Nov Magn

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Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for current-induced spin polarization are (1) the presence of built-in spatially-varying electric fields in the junction and (2) energy-dependent carrier scattering processes. Spin-orbit interactions are not required for this effect, thus it should occur in materials like silicon that lack significant spin-orbit interactions. Approximate analytic expressions as well as detailed numerical simulations of the time-dependent nonlinear spin transport in a GaAs junction strongly suggest that the recent experimental observation of current-induced spin polarization in this system [Y. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Phys. Rev. Lett. 93, 176601 (2004)] may be explained by this effect.

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Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

Cited by 6 publications

References 22 publications

Theory of the inverse spin galvanic effect in quantum wells

Theory of the inverse spin galvanic effect in quantum wells

Current-Induced Spin Photocurrent in GaAs at Room Temperature

Current-Induced Spin Polarization in Nonmagnetic Semiconductors

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