Current-induced magnetization switching using an electrically insulating spin-torque generator

An, Hongyu; Ohno, Takeo; Kanno, Yoshihiro; Kageyama, Yuito; Monnai, Yasuaki; Maki, Hideyuki; Shi, Ji; Ando, Kotoji

doi:10.1126/sciadv.aar2250

Cited by 72 publications

(57 citation statements)

References 48 publications

(85 reference statements)

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“…The sign reversal of the switching polarity suggests that there is a significant REE-induced DLT that is of comparable magnitude, but opposite in sign to SHE-induced DLT, and that it can be modified by oxygen manipulation. The enhancement in the spin Hall angle or SOT efficiency by oxygen engineering has been also demonstrated in other structures such as Ni 81 Fe 19 /Cu, [78] Pt(O)/NiFe, [100,101] and W(O)/CoFeB. [81] Figure 3f,g shows the ST-FMR spectra of the Ni 81 Fe 19 /Cu samples before and after oxidation for 120 d in ambient conditions, respectively.…”

Section: Sot Enhancement By Interface Modificationsupporting

confidence: 52%

“…For example, SHE can be enhanced by introducing scattering centers into NMs using methods of structural modification, [23,45,47,60,[91][92][93][94] alloying, [77,[95][96][97] or oxygen incorporation. [78,81,[98][99][100][101][102][103] The enhancement in the SOT efficiency has also been demonstrated by the modification of NM/FM interface, which increases REEinduced spin current and associated SOT, and/or improves the spin transmission through the interface. [47,60,79,104] The second issue is the necessity of an in-plane external field for the SOT-induced deterministic switching of perpendicular magnetization.…”

Section: Control Of Magnetization In Magnetic Nanostructures Is Essenmentioning

confidence: 99%

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Current‐Induced Spin–Orbit Torques for Spintronic Applications

et al. 2020

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Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin–orbit torque (SOT), which originates from the spin–orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in‐plane current. SOT spearheads novel spintronic applications including high‐speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT‐based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field‐free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out‐of‐plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.

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Section: Sot Enhancement By Interface Modificationsupporting

confidence: 52%

Section: Control Of Magnetization In Magnetic Nanostructures Is Essenmentioning

confidence: 99%

Current‐Induced Spin–Orbit Torques for Spintronic Applications

et al. 2020

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“…In essence, our devices can be controlled to behave to be possessing either a positive or a negative effective spin Hall angle without any physical stack modifications. While the previous works 17–21 have offered only a limited electric-field control on the magnitude of SOTs, we demonstrate a sizable control over both the magnitude as well as direction of SOTs. Our findings will offer a substantial improvement to the SOT based memory scheme as well as create opportunities for novel applications such as spin-logic circuits and programmable spin-circuits 22 .…”

Section: Introductioncontrasting

confidence: 47%

Electric-field control of spin accumulation direction for spin-orbit torques

et al. 2019

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Electric field is an energy-efficient tool that can be leveraged to control spin–orbit torques (SOTs). Although the amount of current-induced spin accumulation in a heavy metal (HM)/ferromagnet (FM) heterostructure can be regulated to a certain degree using an electric field in various materials, the control of its direction has remained elusive so far. Here, we report that both the direction and amount of current-induced spin accumulation at the HM/FM interface can be dynamically controlled using an electric field in an oxide capped SOT device. The applied electric field transports oxygen ions and modulates the HM/FM interfacial chemistry resulting in an interplay between the spin Hall and the interfacial torques which in turn facilitates a non-volatile and reversible control over the direction and magnitude of SOTs. Our electric-field controlled spin-orbitronics device can be programmed to behave either like the SOT systems with a positive spin Hall angle or a negative spin Hall angle.

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“…We found ξ DL ≈ 0.058 and ξ FL ≈ −0.002 for Pt, which are consistent with the previous reports. [ 45,46 ] Hence, PtTe 2 presents a larger SOT efficiency than Pt. The ξ DL (FL) of PtTe 2 can be further improved by minimizing the air exposure time and reducing the surface roughness as presented by the red circles in Figure 5a with ξ DL ≈ 0.152 and ξ FL ≈ −0.004 (samples prepared at a different batch).…”

Section: Figurementioning

confidence: 99%

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

et al. 2020

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Spin-orbit torque (SOT) provides an ultrafast and energy-efficient means to switch magnetization, which is of fundamental and technical importance for spintronic devices. [1][2][3][4][5] A typical SOT device consists of heavy metal/ferromagnet (HM/FM) bilayer, where the HM (e.g., Pt, W, Ta, etc.) converts charge current into spin current mainly due to the spin Hall effect (SHE) and then exerts a torque on the adjacent FM enabling magnetization manipulation. To improve the energy efficiency of SOT-driven magnetization switching, considerable efforts have been made to enhance the charge-spin conversion efficiency of HM [6][7][8][9] and reduce the shunting current in the FM. [10,11] Engineering the bilayer structure [9,12] or replacing HM by novel materials with larger charge-spin conversion efficiency and higher conductivity [10,13,14] are possible avenues to realize higher SOT efficiency. Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities.Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe 2 , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe 2 thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe 2 layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe 2 -like TMDs for wafer-scale spintronic device applications.

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Current-induced magnetization switching using an electrically insulating spin-torque generator

Abstract: This paper reports the first demonstration of current-induced magnetization switching using an ordinary insulator.

Cited by 72 publications

References 48 publications

Current‐Induced Spin–Orbit Torques for Spintronic Applications

Current‐Induced Spin–Orbit Torques for Spintronic Applications

Electric-field control of spin accumulation direction for spin-orbit torques

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

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Current-induced magnetization switching using an electrically insulating spin-torque generator

Abstract: This paper reports the first demonstration of current-induced magnetization switching using an ordinary insulator.

Cited by 72 publications

References 48 publications

Current‐Induced Spin–Orbit Torques for Spintronic Applications

Current‐Induced Spin–Orbit Torques for Spintronic Applications

Electric-field control of spin accumulation direction for spin-orbit torques

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe2

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High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂