Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy

Andrearczyk, T.; Sadowski, J.; Dybko, K.; Figielski, T.; Wosiński, T.

doi:10.1063/5.0124673

Cited by 7 publications

(2 citation statements)

References 32 publications

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“…As a result of enhanced SOC strength the (Ga,Mn)(Bi,As) layers are distinguished by significantly increased magnitudes of the anisotropic magnetoresistance [ 17 ] and planar Hall effect [ 19 ]. Moreover, our very recent experiments demonstrate also that an incorporation of just 1% Bi into (Ga,Mn)As layer results in 6-fold lowering the threshold current necessary for spin-orbit torque driven magnetization reversal with respect to that in bismuth-free (Ga,Mn)As [ 20 ].…”

Section: Introductionmentioning

confidence: 99%

Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance

et al. 2023

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The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition of a small atomic fraction of 1% Bi atoms, substituting As atoms in the layer, predominantly enhances the spin–orbit coupling strength in its valence band. The presence of bismuth results in a small decrease in the ferromagnetic Curie temperature and a distinct increase in the coercive fields. On the other hand, the Bi incorporation into the layer strongly enhances the magnitude of negative magnetoresistance without affecting the hole concentration in the layer. The negative magnetoresistance is interpreted in terms of the suppression of weak localization in a magnetic field. Application of the weak-localization theory for two-dimensional ferromagnets by Dugaev et al. to the experimental magnetoresistance results indicates that the decrease in spin–orbit scattering length accounts for the enhanced magnetoresistance in (Ga,Mn)(Bi,As).

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Section: Introductionmentioning

confidence: 99%

Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance

et al. 2023

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“…On the other hand, the incorporation of a small amount of heavy Bi atoms, substituting As atoms in epitaxial GaAs layers, results in a strong enhancement of the spin-orbit interaction in the valence band due to the high-Z element Bi. The spin-orbit coupling gives rise to a number of phenomena in (Ga,Mn)As, including anisotropic magnetoresistance (AMR) [10], planar Hall effect (PHE) [11], and spin-orbit torque [12].…”

Section: Introductionmentioning

confidence: 99%

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Yastrubchak

Tataryn

Gluba

et al. 2023

Preprint

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The influence of the addition of Bi to the (Ga,Mn)As dilute ferromagnetic semiconductor on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy (HARPES) reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease of the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin-orbit split off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.

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Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Yastrubchak,

Tataryn,

Gluba

et al. 2023

Sci Rep

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The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin–orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.

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Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy

Cited by 7 publications

References 32 publications

Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance

Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

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