2020
DOI: 10.1103/physrevb.101.155415
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Current-induced atomic motion, structural instabilities, and negative temperatures on molecule-electrode interfaces in electronic junctions

Abstract: Molecule-electrode interfaces in molecular electronic junctions are prone to chemical reactions, structural changes, and localized heating effects caused by electric current. These can be exploited for device functionality or may be degrading processes that limit performance and device lifetime. We develop a nonequilibrium Green's function based transport theory in which the central region atoms and, more importantly, atoms on molecule-electrode interfaces are allowed to move. The separation of time-scales of … Show more

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Cited by 24 publications
(25 citation statements)
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References 87 publications
(121 reference statements)
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“…In alignment with our previous work [3,4,32,[56][57][58], we assume that the classical motion along the reaction coordinate within the system occurs over long time-scales relative to the characteristic electron tunnelling time. This provides us with the required small parameter to be able to perturbatively solve ( 5) and ( 6) up to the first order in expansion of the exponents with derivatives.…”
Section: B Green's Functions and Self-energiesmentioning
confidence: 94%
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“…In alignment with our previous work [3,4,32,[56][57][58], we assume that the classical motion along the reaction coordinate within the system occurs over long time-scales relative to the characteristic electron tunnelling time. This provides us with the required small parameter to be able to perturbatively solve ( 5) and ( 6) up to the first order in expansion of the exponents with derivatives.…”
Section: B Green's Functions and Self-energiesmentioning
confidence: 94%
“…An applied voltage allows for the flow of electronic current across the system through the valence states of the molecule. Large current densities and power dissipation give way to strong current-induced forces and bondselective heating which act to destabilize the molecular configuration within the junction, resulting in molecular conformational changes including telegraphic switching [1][2][3][4], along with providing the necessary energy for total bond rupture [5][6][7][8][9][10][11]. This is obviously an undesirable feature for promoting molecular electronics as a possible avenue for moving beyond the traditional silicon semiconductor technology into a regime of highly efficient and tailorable molecular-scale devices, and so a thorough theoretical understanding is required for further progress.…”
Section: Introductionmentioning
confidence: 99%
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“…11,43 Similarly, the study of mechanical instabilities of molecular junctions under the influence of nonconservative current-induced forces has so far been based on classical treatments of the nuclei and/or used the harmonic approximation for the description of the nuclear potentials. [44][45][46][47][48] It is also noted that the theoretical framework to study the related process of dissociative electron attachment in the gas phase is well established, [49][50][51][52] but this problem is conceptually simpler because only a single electron that is scattered from the molecule has to be considered. Moreover, the processes of light-induced dissociation or desorption of molecules at surfaces has also been studied in great detail theoretically.…”
Section: Introductionmentioning
confidence: 99%
“…Since we do not detect any preferential direction of motion it is reasonable to assume that the motion is activated by current-induced heating of the GNR. [29][30][31][32][33][34] Adopting a theoretical value of about E GNR D ≈ 0.5 eV for the diffusion barrier for Co on single layer graphene from theory (see Ref. 35, and references therein), we can use the observed hopping rate ν during a pulse, ν ∼ 25 s −1 , for estimating the effective temperature on the GNR.…”
mentioning
confidence: 99%