Current improvement of porous silicon photovoltaic devices by using double layer porous silicon structure: applicable in porous silicon solar cells

Rajabi, M.; Dariani, R.S.

doi:10.1007/s10934-008-9226-7

Cited by 37 publications

(23 citation statements)

References 20 publications

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“…The PSi energy gap is definitely having higher energy gaps compared to Silicon (1.11eV). The extracted values of band gap are in the same range of the reported results (1.5-2.5 eV) for PSi samples [22][23][24]. …”

Section: Photoluminescence (Pl) Propertiessupporting

confidence: 84%

Electrical Properties of Porous Silicon for N2 Gas Sensor

Bahar¹,

Eskandari²,

Shaban³

2017

J Theor Comput Sci

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The application of porous silicon (PSi) for gas sensing devices has gained a considerable attention in the last decade. This work considers the electrical features of PSi layers prepared by electrochemical etching. We find that in order to get a better understanding of the absorption properties of PSi surface, it is necessary to know how the PSi morphology depends on the etching parameters. The physical structure of PSi, i.e., porosity, and pore size distribution can be controlled by changing the Hydrofluoric Acid concentration, current density, anodizing length and etching time in anodizing procedure. We describe our test system for gas sensors and investigate on the electrical behavior of PSi layers (p-type) in N 2 gas for various fabrication conditions. The results show that the current density increases significantly as N 2 gas is adsorbed. The measurements of the I-V characteristics were carried out at atmospheric pressure, room temperature, and with N 2 gas as well.

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Section: Photoluminescence (Pl) Propertiessupporting

confidence: 84%

Electrical Properties of Porous Silicon for N2 Gas Sensor

Bahar¹,

Eskandari²,

Shaban³

2017

J Theor Comput Sci

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“…3). The efficiency of the sample is about seven times lower than our porous silicon sample, 0.0015 % [10]. The reason could be due to that porous silicon has slightly higher efficiency than TiO 2 and it needs systematic experiment to get high efficiency for TiO 2 .…”

Section: Page 5 Of 11mentioning

confidence: 60%

Fabrication of TiO2 nanostructures on TiO2/Au/quartz device for solar cell applications

Dariani

Easy

2015

Optik

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“…The porous layer is formed by electrochemical etching of Si wafer at a constant current density of 20 mA/cm 2 for 20 min in ethanoic solution of 32% HF (HF/C 2 H 5 OH = 4:1). The details of setup and method of PS formation are reported elsewhere [23]. Oxidation of porous silicon is performed by annealing at 800 • C for 1 h in an ambient air furnace.…”

Section: Methodsmentioning

confidence: 99%

Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates

2011

Self Cite

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We have investigated an oxidation of substrate effect on structural morphology of zinc oxide (ZnO) rods. ZnO rods are grown on porous silicon (PS) and on thermally oxidized porous silicon substrates by carbothermal reduction of ZnO powder through chemical vapour transport and condensation. Porous silicon is fabricated by electrochemical etching of silicon in hydrofluoric acid solution. The effects of substrates on morphology and structure of ZnO nanostructures have been studied. The morphology of substrates is studied by atomic force microscopy in contact mode. The texture coefficient of each sample is calculated from X-ray diffraction data that demonstrate random orientation of ZnO rods on oxidized porous silicon substrate. The morphology of structures is investigated by scanning electron microscopy that confirms the surface roughness tends to increase the growth rate of ZnO rods on oxidized PS compared with porous silicon substrate. A green emission has been observed in ZnO structures grown on oxidized PS substrates by photoluminescence measurements.

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Current improvement of porous silicon photovoltaic devices by using double layer porous silicon structure: applicable in porous silicon solar cells

Cited by 37 publications

References 20 publications

Electrical Properties of Porous Silicon for N2 Gas Sensor

Electrical Properties of Porous Silicon for N2 Gas Sensor

Fabrication of TiO2 nanostructures on TiO2/Au/quartz device for solar cell applications

Growth of ZnO Nanostructures on Porous Silicon and Oxidized Porous Silicon Substrates

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