Current-driven phase-change optical gate switch using indium–tin-oxide heater

Kato, Kentaro; Kuwahara, Masashi; Kawashima, Hitoshi; Tsuruoka, Tohru; Tsuda, Hitoshi

doi:10.7567/apex.10.072201

Cited by 139 publications

(110 citation statements)

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“…5d). The device exhibits a large switching CR of 42 dB and a low IL of < 0.5 dB, far outperforming previous nonvolatile switches [5][6][7][8][9] as well as devices based on the classical GST-225 material with a similar configuration (Fig. 5e); as can be seen from Fig.…”

Section: High-performance Nonvolatile Integrated Photonic Switch Demomentioning

confidence: 68%

Broadband transparent optical phase change materials for high-performance nonvolatile photonics

et al. 2019

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Optical phase change materials (O-PCMs), a unique group of materials featuring exceptional optical property contrast upon a solid-state phase transition, have found widespread adoption in photonic applications such as switches, routers and reconfigurable meta-optics. Current O-PCMs, such as Ge–Sb–Te (GST), exhibit large contrast of both refractive index (Δn) and optical loss (Δk), simultaneously. The coupling of both optical properties fundamentally limits the performance of many applications. Here we introduce a new class of O-PCMs based on Ge–Sb–Se–Te (GSST) which breaks this traditional coupling. The optimized alloy, Ge2Sb2Se4Te1, combines broadband transparency (1–18.5 μm), large optical contrast (Δn = 2.0), and significantly improved glass forming ability, enabling an entirely new range of infrared and thermal photonic devices. We further demonstrate nonvolatile integrated optical switches with record low loss and large contrast ratio and an electrically-addressed spatial light modulator pixel, thereby validating its promise as a material for scalable nonvolatile photonics.

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Section: High-performance Nonvolatile Integrated Photonic Switch Demomentioning

confidence: 68%

Broadband transparent optical phase change materials for high-performance nonvolatile photonics

et al. 2019

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“…In addition to the electrical resistance contrast, a pronounced change in the optical property, including refractive index, extinction coefficient, and reflectance, also occurs in PCMs during the phase transition [14,15]. Such features have led to the development of on-chip non-volatile photonic applications, such as nanopixel display [16,17], photonic synapse [18,19], optical computing [20], and optical switching [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Miniature Multilevel Optical Memristive Switch Using Phase Change Material

et al. 2019

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The optical memristive switches are electrically activated optical switches that can memorize the current state. They can be used as optical latching switches in which the switching state is changed only by applying an electrical Write/Erase pulse and maintained without external power supply.We demonstrate an optical memristive switch based on a silicon MMI structure covered with nanoscale-size Ge2Sb2Te5 (GST) material on top. The phase change of GST is triggered by resistive heating of the silicon layer beneath GST with an electrical pulse. Experimental results reveal that the optical transmissivity can be tuned in a controllable and repeatable manner with the maximum transmission contrast exceeding 20 dB. Partial crystallization of GST is obtained by controlling the width and amplitude of the electric pulses. Crucially, we also demonstrate that both Erase and Write operations, to and from any intermediate level, are possible with accurate control of the electrical pulses. Our work marks a significant step forward towards realizing photonic memristive switches without static power consumption, which are highly demanded in highdensity large-scale integrated photonics.

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“…[24][25]30,44 Based on a similar trend, the consumed energy for amorphization can be as low as 0.066 nJ (6.6 aJ/nm 3 ) that is almost two or more orders of magnitude more efficient than previous results. [24][25]30,44 Note that the energy efficiency can be further improved if partial crystallization or amorphization is needed which is essential for multi-level operations. In this case, the pulse width can be much shorter (< 1 ns as discussed earlier) so that it is possible to reduce the energy consumption to near the fundamental limit (1.2 aJ/nm 3 ).…”

Section: Resultsmentioning

confidence: 88%

“…For the PINC with 20-nm-thick GST, the consumed energy for crystallization can be optimized to be as low as ~0.192 nJ (19.2 aJ/nm 3 ) with energy efficiency of ~3.5% that is at least one order of magnitude more efficient than previous results. [24][25]30,44 Based on a similar trend, the consumed energy for amorphization can be as low as 0.066 nJ (6.6 aJ/nm 3 ) that is almost two or more orders of magnitude more efficient than previous results. [24][25]30,44 Note that the energy efficiency can be further improved if partial crystallization or amorphization is needed which is essential for multi-level operations.…”

Section: Resultsmentioning

confidence: 90%

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Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

Zheng

Zhu

et al. 2020

ACS Appl. Mater. Interfaces

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Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip.Relying on the weak, volatile thermo-optic or electro-optic effects, such systems usually exhibit limited reconfigurability along with high energy consumption and large footprints. These challenges can be addressed by resorting to chalcogenide phase-change materials (PCMs) such as Ge 2 Sb 2 Te 5 (GST) that provide substantial optical contrast in a self-holding fashion upon phase transitions. However, current PCM-based integrated photonic applications are limited to single devices or simple PICs due to the poor scalability of the optical or electrical self-heating actuation approaches. Thermal-conduction heating via external electrical heaters, instead, allows large-scale integration and large-area switching, but fast and energy-efficient electrical control is yet to show.Here, we model electrical switching of GST-clad integrated nanophotonic structures with graphene 2 heaters based on the programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and high in-plane thermal conductivity of graphene, the proposed structures exhibit a high switching speed of ~80 MHz and high energy efficiency of 19.2 aJ/nm 3 (6.6 aJ/nm 3 ) for crystallization (amorphization) while achieving complete phase transitions to ensure strong attenuation (~6.46 dB/µm) and optical phase (~0.28 p/µm at 1550 nm) modulation. Compared with indium tin oxide and silicon p-i-n heaters, the structures with graphene heaters display two orders of magnitude higher figure of merits for heating and overall performance. Our work facilitates the analysis and understanding of the thermal-conduction heating-enabled phase transitions on PICs and supports the development of the future large-scale PCM-based electronicphotonic systems.The past decades have witnessed the booming applications of photonic integrated circuits (PICs). Benefiting from the low-loss broadband transmission, PICs have demonstrated advantages over electronics in information transport including telecommunication and data center interconnects.Recently, thanks to the remarkable advances in nanofabrication, the level of complexity of photonic integration has reached a new height, shedding light on the future electronic-photonic systems on a chip. 1-2 The availability of large-scale PICs, along with the slowing down of Moore's Law 3 and the von Neumann bottleneck in electronics, is thus offering PICs new opportunity to compete with electronic systems in energy-efficient broadband data processing and storage, in particular, for emerging applications such as neuromorphic computing, 4 quantum information, 2,5 and microwave photonics. 6-7 Similar to electronic field-programmable gate arrays (FPGAs), success in these fields requires large-scale programmable PICs that have low-energy, compact, and high-speed building blocks with ultra-low insertion loss. 8-9 Such general-purpose PICs can be reconfigured at will to meet t...

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Current-driven phase-change optical gate switch using indium–tin-oxide heater

Cited by 139 publications

References 20 publications

Broadband transparent optical phase change materials for high-performance nonvolatile photonics

Broadband transparent optical phase change materials for high-performance nonvolatile photonics

Miniature Multilevel Optical Memristive Switch Using Phase Change Material

Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

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