Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure

Волков, Н. В.; Еремин, Е. В.; Tsikalov, V S; Patrin, G. S.; Kim, P D; Sui, Yu; Kim, Dong-Hyun; Chau, N.

doi:10.1088/0022-3727/42/6/065005

Cited by 12 publications

(13 citation statements)

References 20 publications

(22 reference statements)

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“…6 black curve) observed around 250 K. It may be interpreted as current channel switching. Such phenomenon was found in di fferent films like Cu80Co20 [26],Fe3O4 [27],Fe [28], LSMO [29] and other conductive films grown on Si substrate. The electrical current in structure measured with current in plane geometry shunt by Si bulk at high temperature, which depends on doping concentration and bias current.…”

Section: Resultsmentioning

confidence: 78%

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

et al. 2017

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An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron-silicon alloy films with different silicon content (x = 0-0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

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Section: Resultsmentioning

confidence: 78%

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

et al. 2017

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“…The described scenario was observed in full in the structure under study [6]. The V-I characteristics of the structure have the initial, almost linear portion corresponding to the case when the current flows mainly through the top layer of the structure.…”

Section: Magnetic Tunnel Structures In Current-in-plane Geometrymentioning

confidence: 78%

“…The first system to consider is the manganite-based magnetic tunnel structure La 0.7 Sr 0.3 MnO 3 (100 nm)/manganite depleted layer (5 nm)/MnSi (10 nm) in unconventional CIP geometry [6]. Here, the depleted layer is an insulator; therefore, it forms a potential barrier between the La 0.7 Sr 0.3 MnO 3 (LSMO) ferromagnetic electrodes with T C ¼250 K and MnSi with T C ¼30 K. Fig.…”

Section: Magnetic Tunnel Structures In Current-in-plane Geometrymentioning

confidence: 99%

Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation

Волков

Еремин

Tarasov

et al. 2012

Journal of Magnetism and Magnetic Materials

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“…The first experiments on magnetic field influence on hybrid structure resistance were carried out for the Fe/SiO 2 /p-Si structure using CIP geometry. These studies were evoked by results obtained at investigation of the LSMO/LSM 1-δ O/MnSi tunnel structure in planar geometry [17]. The main features of the transport and magnetotransport properties are related to the current channel switching between structure layers [18].…”

Section: Bias-sensitive DC Mr In Cip Geometrymentioning

confidence: 99%

Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

Волков

Tarasov

Рауцкий

et al. 2018

Journal of Magnetism and Magnetic Materials

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Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with nor p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/S iO 2 /n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 10 6 % in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 10 3 % at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO 2 /n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.

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Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure

Cited by 12 publications

References 20 publications

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation

Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

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