Current dependence of electro-optical parameters in green and blue (AlIn)GaN laser diodes

Hager, Thomas; Brüderl, G.; Lermer, Teresa; Tautz, Soenke; Gomez‐Iglesias, Alvaro; Müller, Jens; Avramescu, Adrian; Eichler, Christoph; Gerhard, Sven; Strauß, Uwe

doi:10.1063/1.4764067

Cited by 27 publications

(6 citation statements)

References 15 publications

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“…Then the SE could be obtained from the slopes of the L-I plots above the threshold current. And the injection efficiency η inj and internal loss α i could be obtained using [31][32][33]:…”

Section: Resultsmentioning

confidence: 99%

GaN-based distributed feedback laser diodes grown on Si

Tang¹,

Feng²,

Liu³

et al. 2022

J. Phys. D: Appl. Phys.

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This letter reports room-temperature electrically injected GaN-based distributed feedback laser diodes grown on Si. A hundred pairs of high-order gratings were prepared by dry-etching along the ridge to select only single mode, and tetramethyl ammonium hydroxide polishing technology was adopted to remove the etching damage and make the sidewall smooth and steep. As a result, we have successfully fabricated GaN-based distributed feedback laser diodes grown on Si with a side-mode suppression ratio of ~10 dB. Further analysis revealed that the fabrication of gratings reduced the injection efficiency and increased the optical loss, which deteriorated the device performance. Further improvements of the laser material quality and device fabrication are underway.

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Section: Resultsmentioning

confidence: 99%

GaN-based distributed feedback laser diodes grown on Si

Tang¹,

Feng²,

Liu³

et al. 2022

J. Phys. D: Appl. Phys.

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“…It can be seen that the slope efficiency first decreases and then increases with thickness of u-GaN layer increasing. In fact, the slope efficiency is inversely proportional to the optical loss and it is proportional to the injection efficiency according to the analysis by Hager et al [18] Meanwhile, the injection efficiency should be in proportion to the barrier of the electron blocking layer, which means that the slope efficiency is also proportional to the barrier of the electron blocking layer. Therefore, optical distribution and barrier of electron blocking layer are calculated and shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

et al. 2017

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The upper waveguide (UWG) has direct influences on the optical and electrical characteristics of the violet laser diode (LD) by changing the optical field distribution or barrier of the electron blocking layer (EBL). In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power (OLP) under an injecting current of 120 mA or the threshold current (I th ) is deteriorated when the UWG is u-In 0.02 Ga 0.98 N/GaN or u-In 0.02 Ga 0.98 N/Al x Ga 1−x N (0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor (OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In 0.02 Ga 0.98 N /GaN/Al 0.05 Ga 0.95 N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.

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“…According to the reports of Sizov et al OE72;73 , piezoelectric field hinders hole transport and holes are mainly confined in the QW nearest the p-side in the c-plane InGaN-based green LDs. However, according to the reports of Hager et al OE74;75 , holes can overflow from the green active region in the c-plane green LDs and recombine in the n-InGaN layer right below green active region. Zhang et al OE76 report that large amounts of holes can penetrate through seven In 0:4 Ga 0:6 N/GaN QWs with the assistance of piezoelectric field at high current density.…”

Section: Carrier Leakagementioning

confidence: 97%

GaN-based green laser diodes

et al. 2016

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Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.

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Current dependence of electro-optical parameters in green and blue (AlIn)GaN laser diodes

Cited by 27 publications

References 15 publications

GaN-based distributed feedback laser diodes grown on Si

GaN-based distributed feedback laser diodes grown on Si

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

GaN-based green laser diodes

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