Current Density Contribution to Plasmonic Enhancement Effects in Metal–Semiconductor–Metal Photodetectors

Darweesh, Ahmad A.; Bauman, Stephen J.; French, David; Nusir, Ahmad I.; Manasreh, M. O.; Herzog, Joseph B.

doi:10.1109/jlt.2018.2811749

Cited by 5 publications

(10 citation statements)

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“…The results of these two models were then used to calculate the total weighted optical enhancement as explained in detail in Ref. [22]. The optical enhancement is defined as the maximum ratio of the local enhanced electric field in the substrate, jE local j, to the incident electric field, jE 0 j, all squared-proportional to the irradiance [9].…”

Section: Methodsmentioning

confidence: 99%

“…(2) calculated G for the entire simulated device's active area (10 μm × 10 μm). The active area is defined as the area of the substrate covered by the nanostructures [22]. These equations are given by…”

Section: Methodsmentioning

confidence: 99%

“…where E ij and J ij are the enhanced electric field and current density at each individual mesh point in the x-y plane, respectively, and W tot is the total width of the proposed device's active area [22]. , respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Furthermore, a correlation called the total weighted optical enhancement G was established using the enhanced electric field E and the current density J in the substrate. This value gives an approximation of overall device performance by uniting plasmonic enhancement and current density to approximate photocurrent production efficiency [22].…”

Section: Introductionmentioning

confidence: 99%

“…The plasmonic electrodes have a 15-nm thickness, t, and 160-nm width, w, since this width was the optimal width for similar structures as determined in Ref. [22]. During simulations, the nanoslit width, g, was fixed at 5 nm, and the incident wavelength, λ, was fixed at 875 nm, which is near the bandgap of the GaAs substrate [33,34].…”

Section: Introductionmentioning

confidence: 99%

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Effect of incidence and sidewall taper angles on plasmonic metal–semiconductor–metal photodetector enhancements

et al. 2019

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We investigate an interdigitated nanograting structure on a GaAs substrate for plasmonic metal-semiconductormetal photodetector applications. This computational work has studied the effects that the taper angle of the nanograting sidewall and the light wave angle of incidence have on the optical and current enhancements in the device. The study, involving two types of taper angle structures-positive and negative-showed that both taper angle directions can generate more optical and electrical enhancements than perfectly vertical wall structures for light incident at both the Brewster angle and the normal incident angle. The enhanced electric field value at the optimum positive taper angle is ∼22% and ∼120% greater than the negative taper angle and vertical wall structure, respectively. In addition, the total weighted optical enhancement value for the optimal positive taper angle structure is ∼65% and ∼120% greater than the optimal negative taper angle and vertical wall structure, respectively. This work demonstrates that the increased enhancements are due to the nanoscale focusing of light and impedance matching. The incident wave angle along with the taper angle can significantly promote these enhancements, especially at the Brewster angle.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%