Current‐Controllable and Reversible Multi‐Resistance‐State Based on Domain Wall Number Transition in 2D Ferromagnet Fe3GeTe2
Chendi Yang,
Yalei Huang,
Ke Pei
et al.
Abstract:Controlling the multi‐state switching is significantly essential for the extensive utilization of 2D ferromagnet in magnetic racetrack memories, topological devices, and neuromorphic computing devices. The development of all‐electric functional nanodevices with multi‐state switching and a rapid reset remains challenging. Herein, to imitate the potentiation and depression process of biological synapses, a full current strategy is unprecedently established by the controllable resistance‐state switching originati… Show more
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