Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation

Saito, Wataru; Kuraguchi, Masahiko; Takada, Yoshiharu; Tsuda, Koji; Saito, Yasunobu; Omura, Ichiro; Yamaguchi, Masakazu

doi:10.1109/iedm.2007.4419087

Cited by 23 publications

(21 citation statements)

References 1 publication

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“…Especially, the trapping effects through the surface states leads to a high device leakage current (I leak ) which results in high off-state current (I off ), the poor subthreshold swing (SS), low breakdown voltage (BV), high noise, and low power efficiency [6][7][8]. To suppress the I leak , the process step for the reduction of surface current (I surf ) is required.…”

Section: Introductionmentioning

confidence: 99%

TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Yoon

Seo

Cho

et al. 2016

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Yoon

Seo

Cho

et al. 2016

Solid-State Electronics

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“…Such non-localized trapping effects should have a strong adverse effect on the performance. In fact, Saito et al 21,22 have pointed out that the operation voltages of these devices are always much lower than the breakdown voltages owing to the increased conduction loss caused by current collapse. To address this issue, they suppressed the high electric field at the gate edge using optimized field plate (FP) structures, 21,22 implying that the non-localized trapping effects were not specifically considered.…”

Section: Introductionmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 100, 223504 (2012) Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors Appl. Phys. Lett. 100, 222901 (2012) Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 111, 104513 (2012) Additional information on J. Appl. Phys. For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be $1.3 Â 10 12 cm À2 . The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al 2 O 3 passivation. V C 2012 American Institute of Physics.

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“…The gate-drain offset length was 14 μm, the gate length was 1.3 μm, the gate width was 3 mm and the active device area was 0.067 mm 2 . The dual field-plate structure was employed to suppress the current collapse phenomena [5]. At the assembly process, the source and the Si-substrate were connected to individual terminals to measure each terminal current.…”

Section: Device Fabrication and Experimental Resultsmentioning

confidence: 99%

“…1. The device processing consisted of conventional HEMT fabrication steps [5]. A MIS gate structure with 20 nm-thick SiN gate insulator film was employed to reduce the gate leakage current.…”

Section: Device Fabrication and Experimental Resultsmentioning

confidence: 99%

Breakdown behaviour of high-voltage GaN-HEMTs

Saito

Suwa

Uchihara

et al. 2015

Microelectronics Reliability

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Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation

Cited by 23 publications

References 1 publication

TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Breakdown behaviour of high-voltage GaN-HEMTs

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