Current characteristics in near field emission scanning tunneling microscopes

Mesa, G.

doi:10.1116/1.588869

Cited by 7 publications

(3 citation statements)

References 8 publications

(12 reference statements)

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“…The first (regime 1), occurring at low voltages (<1 V), takes the form of a dependence characteristic of a tunneling junction between the tip and substrate; i.e., there is an exponential relationship between the barrier distance and the potential. The second regime showed a linear-type response in the gap indicative of a ballistic, field-emissive ejection of electrons from the tip …”

Section: Resultsmentioning

confidence: 99%

“…The second regime showed a linear-type response in the gap indicative of a ballistic, field-emissive ejection of electrons from the tip. 28 Finally, a more complicated relationship existed between the substrate potential and tip height at high potentials (>4 V, regime 3), perhaps because of an increased contribution to the current from the breakdown products of air and other material in the gap between tip and substrate. Voltages higher than 15 V were inaccessible using the amplifiers and feedback controls in our system.…”

Section: Low-energymentioning

confidence: 99%

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Making Gold Nanostructures Using Self-Assembled Monolayers and a Scanning Tunneling Microscope

et al. 1997

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We explored the applicability of a system of self-assembled monolayer (SAM) resists on gold, recently developed by Tam-Chang et al. [Langmuir 1995, 11, 4371−4382], to electron-beam lithography carried out at high (>1000 eV) and low (<15 eV) energies. Lithography using high-energy electrons to make transformations of the short-alkyl-chain, amide-containing monolayer used in this system required doses of electrons >30 μC/cm2, whereas contamination from the chamber in moderate vacuum (10-6 Torr) interfered with the process and provided equally useful resist layers against a cyanide etch of the gold in the absence of monolayers. Low-energy electron lithography of the same monolayer using a scanning tunneling microscope (STM) as the source proved more reliable and allowed the formation of 30−40 nm structures wherever the STM tip passed over the surface with sufficient voltage and current. Our data highlight some of the difficulties encountered when using self-assembled monolayer resists as components in “positive” electron-beam lithography on gold and suggests constraints on using SAMs as ultimate resists.

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Section: Resultsmentioning

confidence: 99%

Section: Low-energymentioning

confidence: 99%

Making Gold Nanostructures Using Self-Assembled Monolayers and a Scanning Tunneling Microscope

et al. 1997

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“…8,18,25,26 Lyding assumes a power law dependence 8 and Adams an exponential one, 18,26 with qualitative but no quantitative interpretation. To get an analytical model for quantitative interpretation, we assume as a starting point a Gaussian electron profile n(x,y) where x is the lateral abscissa perpendicular to the y direction taken as the axe of displacement of the tip: n͑x,y ͒ϭn 0 exp͓Ϫ␣ 2 ͑ x 2 ϩy 2 ͔͒, ͑1͒…”

Section: B Variation Of L With the Dosementioning

confidence: 99%

Nanoscale desorption of H-passivated Si(100)–2×1 surfaces using an ultrahigh vacuum scanning tunneling microscope

Syrykh¹,

Nys²,

Legrand³

et al. 1999

Journal of Applied Physics

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Nanoscale desorption of the Si(100)–2×1 hydrogen terminated surface has been achieved using a scanning tunneling microscope (STM) in an ultrahigh vacuum chamber. We have studied the patterned linewidth as a function of the sample bias and the dose, either with the feedback servo loop on or off. We propose a simple analytical model to explain the variation of the linewidth versus the electron dose. Finally, we show that the best resolution is obtained for pulsed voltages with the STM feedback servo loop on.

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