Current Apertured Vertical Electron Transistor (CAVET)

Mishra, Umesh K.

doi:10.21236/ada408527

Cited by 1 publication

(1 citation statement)

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“…With the further need for high breakdown voltage, low on-resistance, good reliability, and suppression of current collapse in transverse gallium nitride (GaN) devices, GaN vertical power devices have become a hot topic at present [1][2][3][4][5][6][7][8][9]. In 2013 [10], Zhongda Li and T. Paul Chow designed an enhanced vertical device with a superjunction structure, in which the aperture width, buffer layer thickness, and superjunction width were 6 μm, 60 μm, and 3 μm, respectively.…”

Section: Introductionmentioning

confidence: 99%

Research on vertical GaN devices based on gradient Al components

Chen,

Yang,

Zhai

et al. 2023

Front. Phys.

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A groove-gate power device with a linearly gradient Al composition P-type AlGaN superjunction (abbreviated as LG-SJCAVET) is proposed, which uses polarized P-type AlGaN material instead of the traditional P-type GaN buried layer, avoiding the technical bottleneck of achieving high-aspect-ratio P-type doping in GaN materials. Simulation results show that, under the same structural parameters, the breakdown voltage of LG-SJCAVET reaches 2954V, and the on-resistance is 1.669 mΩ⋅cm2, which is due to no current flowing through the P-pillar, resulting in an increase in on-resistance, while affecting the DC characteristics of the device. The power figure of merit of the device is 5.27 GW/cm2, which is 67.11% and 27.38% higher than that of the traditional device and P-type GaN buried layer device, respectively. Therefore, the LG-SJCAVET device solves the problems of the high technical difficulty of the traditional P-type GaN buried layer process, difficulty in activating acceptor impurities, and poor thermal stability of the device, exhibiting superior breakdown voltage characteristics.

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