Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Abstract

The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two configuration schemes: voltage and current responsivity. The ratio between both figures of merit allows one to extract the AC resistance of the diode, showing a very flat value in all the frequency spans. An optimization on the geometrical parameters is performed, finding that the narrower the channel, the higher the voltage responsivity, and the higher the number of channels in parallel, the higher the current responsivity. The expected dependence of the noise equivalent power with the width and number of channels is confirmed. The proposed configuration for best performance of these devices as RF detectors is to allocate the maximum number of channels in parallel and operate in a current responsivity mode.