Curie-temperature modulation by electric fields in Mn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-doped asymmetric double quantum wells

Kim, Nammee; Lee, S. J.; Kang, Tae Won; Kim, Heesang

doi:10.1103/physrevb.69.115308

Cited by 7 publications

(4 citation statements)

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“…V.20. A strong enhancement of T c in a asymmetric double quantum wells structure, which consist of a Mn δ-doped and a p-type doped well, was found by Kim et al (2004) under applying moderate external electric fields of about ≈ 1.5 meV/nm. Such an enhancement was also proposed very recently in a single quantum well of about 40 nm width for low electric fields (≈ 0.3 meV/nm) (Lv et al, 2007).…”

Section: C4 Ferromagnetic Spin-rtdsmentioning

confidence: 92%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

915

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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Section: C4 Ferromagnetic Spin-rtdsmentioning

confidence: 92%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

915

1,204

View full text Add to dashboard Cite

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confidence: 74%

“…There have been many studies on the control of the spin states in double quantum wells or double quantum dots by using bias voltage [1][2][3]. In our former study, we have demonstrated electric-field-controlled ferromagnetism in Mn δ-doped asymmetric conventional double quantum wells [2] and in hybrid double quantum wells [4]. However, in the previous work, our primary interest was the control of the ferromagnetic transition temperature by either applying electric field or reversing dipole polarization.…”

mentioning

confidence: 91%

“…The semiconductor quantum structures are characterized by a confinement potential V c (r) with the lateral parabolic potential in the plane (x, y): 2 where ω x and ω y are radial parabolic confinement strength, and V c (z) is the confinement potential of carriers in the quantum disks along the longitudinal direction as shown in figure 1(b). The effective Hamiltonian of this system can be written in virtue of variable separation; the wavefunction is separable as…”

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confidence: 99%

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Manipulation of spin distribution in double quantum disks with external magnetic field

Kim¹,

Kim²

2009

Semicond. Sci. Technol.

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A ferromagnetic/non-magnetic hybrid-double-quantum-disk (HDQD) structure formed in a nanorod is proposed, which is capable of manipulating the spatial profile of the carrier spins of the system by changing the longitudinal (perpendicular to the disks) external magnetic field. Synergy between size-asymmetrical disks and the difference of g-factors induces energy-level crossing and redistribution of the spin when the external magnetic field changes. The carrier's spin polarization profile is shown as well as the probability density change in the energy subband of each carrier. Characteristics of the structure can be applied to spin devices such as memory devices.

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