Cuprous halides

Schwab, C.; Goltzené, A.

doi:10.1016/0146-3535(82)90018-1

Cited by 61 publications

(32 citation statements)

References 75 publications

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“…Under the influence of light and moisture, hydrated oxyhalides of Cu ++ are formed. 41 This reaction can be easily recognized by a color change in CuCl associated with the presence of the greenish color produced by Cu ++ ions. A protective layer is required to prevent this reaction.…”

Section: Resultsmentioning

confidence: 99%

“…31,41 At room temperature, the prevalent phase of CuCl is called ␥-CuCl, which is a direct band-gap cubic semiconductor, with a band gap of E G = 3.395 eV ͑ ϳ 365 nm-blue/violet light͒ and a lattice constant a CuCl = 0.541 nm. 42,43 Given that the lattice constant for cubic Si is a Si = 0.543 nm ͑room temperature͒, 42 this implies that the lattice misfit of CuCl is Ͻ0.4% with respect to Si ͑100͒ at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly

Lucas

McNally

et al. 2005

Journal of Applied Physics

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We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, ␥-CuCl on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si ͑100͒ or Si ͑111͒, reveal a strong room-temperature Z 3 excitonic emission at ϳ387 nm. We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of ␥-CuCl on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the ␥-CuCl. Since the excitonic binding energy in this direct band-gap material is of the order of 190 meV at room temperature, the electron-hole recombination and subsequent light emission at ϳ380 and ϳ387 nm are mediated by excitonic effects.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly

Lucas

McNally

et al. 2005

Journal of Applied Physics

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“…Any solid solution based on γ-CuBr must be negligible considering that it was possible to grow single crystals of γ-CuBr from CuBr+KBr molten mixtures [16,17].…”

Section: Resultsmentioning

confidence: 99%

Phase Equilibria in Copper(I) Bromide-MBr Systems (M = Li, Na, K)

Wojakowska

Krzyżaka

Wojakowski

et al. 2007

Zeitschrift Für Naturforschung A

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“…We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite-zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux-driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X-ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl.…”

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confidence: 99%

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Cowley

Foy

Danilieuk

et al. 2009

Physica Status Solidi (a)

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Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300–400 nm spectral range. Current materials being used for such devices are typically based on II–VI and III‐nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III‐N devices is lattice mismatch‐induced high dislocation densities for epitaxially grown layers on non‐native substrates. γ‐CuCl is a direct bandgap material and an ionic wide bandgap I–VII semiconductor with a room temperature free exciton binding energy of ∼190 meV (compared to ∼25 meV and ∼60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (λ ∼ 366 nm). The lattice constant of γ‐CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline γ‐CuCl on Si(100) and Si(111) using vacuum‐based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite‐zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux‐driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X‐ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X‐ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Cuprous halides

Cited by 61 publications

References 75 publications

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

Phase Equilibria in Copper(I) Bromide-MBr Systems (M = Li, Na, K)

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

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