CuInSe 2 films produced by graphite box annealing of multilayer precursors

Kundu, Sudarshan; Basu, Madhumita; Chaudhuri, S.; Pal, A.K.

doi:10.1016/s0040-6090(98)01073-6

Cited by 9 publications

(2 citation statements)

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“…In addition, the secondary phases of Cu2Se and CuSe2 were also observed with annealing temperatures of 773K and 798K. Indium is easily lost during high temperature annealing, resulting in the formation of a series CuxSe secondary phases, such as Cu2Se and CuSe2 [11]. Fig.…”

Section: Resultsmentioning

confidence: 86%

Effects of Annealing Temperature on Properties of CuIn (Se,S)<sub>2</sub> Film Prepared by Sputtering

Lin

Chen

Wang

2011

AMM

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This paper examines CuIn(Se,S)2 (CISS) films prepared by sputtering precursor films of In, Cu, and In2S3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.

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Section: Resultsmentioning

confidence: 86%

Effects of Annealing Temperature on Properties of CuIn (Se,S)<sub>2</sub> Film Prepared by Sputtering

Lin

Chen

Wang

2011

AMM

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“…A copper indium diselenide thin film (CuInSe 2 ) is a direct band gap material; it has 1.03 eV in band gap, high optical absorption coefficient (10 6 cm -1 ), reasonable work function, good stability and largest efficiency (it achieved an efficiency of 17 %) [1,2]. Therefore, these properties make CuInSe 2 a promising material for photovoltaic applications [3].…”

Section: Introductionmentioning

confidence: 99%

Characterization of CuInSe2 thin films elaborated by electrochemical deposition

Meglali,

Bouraiou,

Attaf

2008

J. Ren. Energies

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In this paper, we report the elaboration and characterization of CuInSe2 thin films prepared by electrochemical deposition technique. The thin films were deposited at room temperature using two electrodes cell configuration, then they annealed under argon atmosphere at 300 °C for 30 and 45 mn. The structural and optical properties of the films were characterized respectively by means of X-ray diffraction and transmission spectrophotometer measurements. The band gap of the samples was estimated using optical transmittance. All elaborated films show the tetragonal chalcopyrite CuInSe2 with preferential orientation (112) plan. X- ray diffraction and calculation of grain size of the films show that the film annealed at 300 °C during 45 mn presents a good cristallinity, high grain size and its band gap is close to 1.1 eV.

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Adjustment of the selenium amount provided during formation of CuInSe₂ thin films from the metallic precursors

López-García

Guillén

2009

Physica Status Solidi (a)

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CuInSe2 (CIS) thin films were grown by selenization of sequentially evaporated Cu and In metallic precursors. The adjustment of the Selenium amount provided during the selenization process within a partially closed graphite box for film thicknesses between 0.5–2.5 μm was performed. We obtained CuInSe2 films with chalcopyrite structure and preferential orientation along the (112) direction plane. XRD patterns showed intense and narrow peaks that indicate high crystallinity corresponding to a Se amount between 120–180 mg. Direct band gap energy between 0.90–0.97 eV, depending on the Se amount and film thickness, and a high absorption coefficient (∼105 cm–1) were found. A slight improvement in the surface morphology for the optimum Se amount aforementioned was observed. The measured film resistivities varied from 0.1 Ω cm to 40 Ω cm. Thus, the structural, optical and morphological characteristics were dependent of the Se amount provided during the selenization process and after fitting of this selenium, an optimization of the CIS thin films properties and a saving of the Se consumption were achieved. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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CuInSe 2 films produced by graphite box annealing of multilayer precursors

Cited by 9 publications

References 10 publications

Effects of Annealing Temperature on Properties of CuIn (Se,S)<sub>2</sub> Film Prepared by Sputtering

Effects of Annealing Temperature on Properties of CuIn (Se,S)<sub>2</sub> Film Prepared by Sputtering

Characterization of CuInSe2 thin films elaborated by electrochemical deposition

Adjustment of the selenium amount provided during formation of CuInSe₂ thin films from the metallic precursors

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CuInSe 2 films produced by graphite box annealing of multilayer precursors

Cited by 9 publications

References 10 publications

Effects of Annealing Temperature on Properties of CuIn (Se,S)<sub>2</sub> Film Prepared by Sputtering

Effects of Annealing Temperature on Properties of CuIn (Se,S)<sub>2</sub> Film Prepared by Sputtering

Characterization of CuInSe2 thin films elaborated by electrochemical deposition

Adjustment of the selenium amount provided during formation of CuInSe2 thin films from the metallic precursors

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Adjustment of the selenium amount provided during formation of CuInSe₂ thin films from the metallic precursors