1998
DOI: 10.1016/s0927-0248(98)00018-x
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CuInS2 thin film formation on a Cu tape substrate for photovoltaic applications

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Cited by 38 publications
(14 citation statements)
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“…CIS film preparation on a copper tape (CISCuT) by the method of indium electrodeposition, with following sulphurization is described in detail in [8].…”
Section: Methodsmentioning
confidence: 99%
“…CIS film preparation on a copper tape (CISCuT) by the method of indium electrodeposition, with following sulphurization is described in detail in [8].…”
Section: Methodsmentioning
confidence: 99%
“…The final and the longest stage is the annealing of the tape, which takes about 4 s under the atmospheric pressure of the N 2 gas. The fabrication technology of the absorber has been described in more detail by Penndorf et al [2] and it has been recently investigated by Winkler et al [6]. For the present study, we sorted out absorbers which show an asymmetrical diode-like I-V characteristic when contacted by a metal spring contact ("as-grown" cells).…”
Section: Methodsmentioning
confidence: 99%
“…The major advantages of the CISCuT process are high throughput with sulphurisation/heat treatment time of about 6-7 s, continuous roll-to-roll manufacturing, cheap flexible copper substrate, electrochemically deposited In precursor and, as a consequence, potential low fabrication costs [1,2]. It turned out, that the very short heat treatment time, not achievable with any other contemporary CIS technology, makes it possible to create a spontaneous layered structure (so-called "as grown" cell, in this paper referred to as "absorber") during a single sulphurisation/heat treatment step, with properties suitable for light energy conversion.…”
Section: Introductionmentioning
confidence: 99%
“…Rotating disk electrode experiments show that Cu deposits under mass transfercontrolled conditions on Mo, whereas In deposits under kinetic control at room temperature. There are a few reports on electrodeposition of Cu/In or In/Cu stacks for the realization of CIS semiconductor compounds [83,84] . One technologically interesting report from Penndorf et al .…”
Section: Cu(inga)se 2 Via Stacked Metal Layersmentioning
confidence: 99%
“…One technologically interesting report from Penndorf et al . [83] describes the use of copper tape as both the substrate and source of Cu for the formation of CuInS 2 . Indium was electrodeposited on the copper tape in a roll -to -roll process with remarkably high current densities of 150 -200 mA cm − 2 with the help of thiourea.…”
Section: Cu(inga)se 2 Via Stacked Metal Layersmentioning
confidence: 99%