CuInP<sub>2</sub>S<sub>6</sub> Room Temperature Layered Ferroelectric

Belianinov, Alex; He, Qian; Džiaugys, A.; Maksymovych, Peter; Eliseev, Eugene A.; Borisevich, Albina Y.; Morozovska, Anna N.; Banys, J.; Vysochanskii, Yulian M.; Kalinin, Sergei V.

doi:10.1021/acs.nanolett.5b00491

Cited by 369 publications

(307 citation statements)

References 30 publications

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“…Clear reversal of phase contrast confirms the switching of polarization in CIPS down to ∼4 nm. Meanwhile, there are no obvious changes in the corresponding surface morphologies as previously reported10. Furthermore, the CIPS flakes exhibit superior ferroelectric retention despite the relatively low ferroelectric Curie temperature (Supplementary Fig.…”

Section: Resultssupporting

confidence: 76%

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Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

et al. 2016

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Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.

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Section: Resultssupporting

confidence: 76%

“…However, ferroelectricity has so far remained elusive to the 2D material library. Currently the reported critical thickness for ferroelectricity in layered materials is relatively large (above 50 nm thick)10, far from the ultrathin limit.…”

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confidence: 99%

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

et al. 2016

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“…Correspondingly, the description of these phenomena should ascertain the changes in both surface and bulk state. For example, in materials with a purely inert surface in the absence of mobile chemical species, possible processes include purely electronic charge injection/field effect in the surface states or bulk trap states; these types of phenomena are likely to be observed on layered ferroelectric materials [295][296][297] in vacuum when the surface state can be established by direct atomic observations. In comparison, ionically non-conductive but electronically conductive materials in ambient environments are likely to undergo surface electrochemical processes, potentially accompanied by partial charge screening by conductive electrons, as observed on conductive oxide surfaces.…”

Section: Va General Classification Of Bias-induced Phenomenamentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

252

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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“…[8][9][10][11][12][13][14] Particularly, different from ultrathin SnTe and CuInP 2 S 6 , whose polarization only involves either pure IP or OOP orientations, atomically thin 2D In 2 Se 3 shows both IP and OOP ferroelectricity in its ground state of the α phase. [8][9][10][11][12][13][14] Particularly, different from ultrathin SnTe and CuInP 2 S 6 , whose polarization only involves either pure IP or OOP orientations, atomically thin 2D In 2 Se 3 shows both IP and OOP ferroelectricity in its ground state of the α phase.…”

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confidence: 99%

Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier

Dai

Wang

et al. 2019

Adv Elect Materials

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OOP) and in-plane (IP) ferroelectricity could be easily achieved in some atomically thin vdWs 2D ferroelectric films, such as SnTe, CuInP 2 S 6 , LiAlTe 2 , and In 2 Se 3 . [8][9][10][11][12][13][14] Particularly, different from ultrathin SnTe and CuInP 2 S 6 , whose polarization only involves either pure IP or OOP orientations, atomically thin 2D In 2 Se 3 shows both IP and OOP ferroelectricity in its ground state of the α phase. [12] And the IP and OOP polarizations of 2D α-In 2 Se 3 have strong interrelated coupling. [15][16][17][18] In the previous work, we found that the OOP dipole in trilayer In 2 Se 3 is locked by the IP lattice asymmetry and its switching is related to the inversion of IP lattice orientation. [18] Up to date, there are few reports in the literature regarding ultimate miniature switchable rectifiers made of these atomically thin 2D ferroelectrics by utilizing the dipole polarization coupling. [19] Here, we report the fabrication of a gate-controlled switchable ferroelectric diode based on the single crystal of α-In 2 Se 3 by utilizing the interrelated coupling effect of OOP and IP polarizations (Figure 1). This ferroelectric diode can be inversed effectively by switching the gate bias between the negative (Figure 1a) and the positive configurations (Figure 1b). With a good rectification property of the ferroelectric diode, a switchable dynamic half-wave rectifier was realized. This kind of 2D ferroelectric diode has the advantages of simplicity in fabrication compatibility with complementary Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high-density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two-dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D α-In 2 Se 3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out-of-plane and in-plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the α-In 2 Se 3 based ferroelectric diode can reach up to 2.5 × 10 3 . These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next-generation multifunctional electronics. www.advelectronicmat.de metal-oxide-semiconductor (CMOS) technology, and superior electrical rectifying characteristics, showing great potential for future integrated electronic applications.

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CuInP₂S₆ Room Temperature Layered Ferroelectric

Cited by 369 publications

References 30 publications

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier

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CuInP2S6 Room Temperature Layered Ferroelectric

Cited by 369 publications

References 30 publications

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier

Contact Info

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CuInP₂S₆ Room Temperature Layered Ferroelectric