CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

Low-cost and eco-friendly nebulizer spray coated CuInAlS 2 counter electrode for dye-sensitized solar cells

“…On careful observation two important inferences can be observed: (i) the variation in peak broadening with substrate temperature and (ii) shift of A 1 mode towards larger wave number. The strong intense A 1 mode of chalcopyrite compounds in the Raman spectra generally located between the range 291-314 cm -1 and in addition to A l mode another weak peak observed at 350 cm -1 corresponds to B 2 (LO) mode of chalcopyrite [9]. No other minor phases were observed in X-ray diffraction and it is once again confirmed in Raman…”

“…temperature in the prepared CIAS films as it is slightly deviated from Vegard's law. Basically in chalcopyrite type semiconductors A I B III C 2 VI , the tetragonal distortion is a vital parameter which is pure indication of unequal bond lengths between the A-C and B-C atoms [9]. The value of tetragonal distortion can be observed from c/a ratio ( Fig.…”

“…CuInS 2 is one of the most potential candidates for the photovoltaic applications with the band gap value of 1.53 eV [8]. Moreover, in the quaternary material CuInGaS 2 , gallium is a rare and expensive element, so it can be substituted by abundant and economical elements such as aluminum [9], iron [10], sodium [10], zinc [11], bismuth [12], titanium [13], cerium [14], tin [15], etc. Among these materials, Al is the most preferable material to be incorporated in CuInS 2 due to its corrosion resistance, good thermal and electrical conductivity.…”

“…Theoretically, the energy band gap of CuInAlS 2 (CIAS) can be varied from 1.53 eV (CuInS 2 ) to 3.5 eV (CuAlS 2 ) by tuning aluminum incorporation. CIAS thin films have been prepared mostly by PVD techniques such as thermal evaporation, sputtering followed by sulfurization at high temperature, etc [8,9]. Since H 2 S gas is highly toxic and hazardous to human health, extra care has to be taken while using in the laboratory [19].…”

The Effect of Sulfurisation Temperature on Structural Properties of CuAlS2 Thin Films

“…It is observed that in addition to first and second peaks exhibited by thin films grown at room temperature, a third peak appeared at 2 ~ 55 0 and is designated to (312) orientation and belongs to crystalline CuAlS 2 chalcopyrite structure as confirmed by ICDD (card no. 01-074-7053) and previous work of [7] and [13]. Fig.…”