2005
DOI: 10.1016/j.jmmm.2004.09.124
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Cubic binary compounds MnN and MnAs and diluted magnetic semiconductor alloys: a first-principle study

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Cited by 17 publications
(7 citation statements)
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References 57 publications
(59 reference statements)
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“…ZB MnN has therefore been the subject of numerous calculations. [3][4][5][25][26][27][28][29][30][31][32][33] Recently, it has been suggested that the observed distorted rocksalt ground state 1,2,[34][35][36] was stabilized by the presence of 4% nitrogen vacancies. 3 However, MnN rocksalt structure samples have been reported to have the ideal 1:1 Mn:N stoichiometry.…”
Section: Introductionmentioning
confidence: 99%
“…ZB MnN has therefore been the subject of numerous calculations. [3][4][5][25][26][27][28][29][30][31][32][33] Recently, it has been suggested that the observed distorted rocksalt ground state 1,2,[34][35][36] was stabilized by the presence of 4% nitrogen vacancies. 3 However, MnN rocksalt structure samples have been reported to have the ideal 1:1 Mn:N stoichiometry.…”
Section: Introductionmentioning
confidence: 99%
“…In the other cases there are exchange splittings E xc = 0.43 eV (Nb); 0.56 eV (Mo); 0.46 eV (Rh); 0.68 eV (Pd); 5.18 (4d e ↑) 0.06 (4d t 2 ↑) 0.28 3.02 (5s) 0.12 (4d e ↓) 0.06 (4d t 2 ↓) 0.28 Zr (4p) 5.46 (4d e ↑) 0.12 (4d t 2 ↑) 0.42 3.33 (4d e ↓) 0.12 (4d t 2 ↓) 0.42 (5s) 0.12 Nb (4d e ↑) 0.70 (4d t 2 ↑) 0.54 (5s ↑) 0.06 (5p ↑) 0.15 2.67 (4d e ↓) 0.16 (4d t 2 ↓) 0.50 (5s ↓) 0.06 (5p ↓) 0.16 Mo (5s ↑) 0.07 (4p ↑) 0.12 (4d e ↑) 1.90 (4d t 2 ↑) 0.14 2.80 (5s ↓) 0.06 (4p ↓) 0.12 (4d e ↓) 2.59 (5s ↓) 0.11 (4p ↓) 0.10 (4d e ↓) 1.69 (4d t 2 ↓) 2.06 0.29 eV (Ag). These values are to be compared to the bigger value (3.4 eV) obtained for the Ga 0.94 Mn 0.06 N alloy [2].…”
Section: Electronic Configurationsmentioning
confidence: 94%
“…In the present work we examine the electronic and magnetic properties of ordered dilute alloys based on GaN, in the zinc-blende phase, doped with 4d transition metal atoms (4d TM) substituting for Ga in a concentration x = 6%. This study is stimulated both by the results already found for Ga 1−x Mn x N [2] and Al 1−x Mn x N [3] and by the fast developing technology based on III nitrides. On the other hand, the actual mechanisms supporting the ferromagnetism induced by the carriers in the dilute alloys based on GaN are still not well understood.…”
Section: Introductionmentioning
confidence: 89%
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“…They are quite distinctive from other materials with their 100% spin polarization properties around Fermi energy levels, since one of the spin-up or spin-down electron states cuts the Fermi energy level, the other does not [15][16][17][18][19][20]. Half-metallic properties of some half-full, quaternary Heusler alloys [21][22][23][24][25][26], diluted magnetic semiconductors [27][28][29][30], perovskite/double perovskite compounds [31,32] have been extensively studied in recent years. Different from simple or double perovskite groups, variant perovskite compounds have been studied intensively in recent years.…”
Section: Introductionmentioning
confidence: 99%