Cu2ZnSnS4 films grown in one-step process by spray pyrolysis with improved properties

Ramirez, E. A.; Ramírez, A.A.; Gordillo, G.

doi:10.1016/j.mssp.2017.05.024

Cited by 13 publications

(6 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The optical absorbance spectra increased with annealing temperature increased, the values of optical absorbance in the wavelength 475 nm are 1.34, 1.56 and 1.80 for the CNTS films deposited at 4, 5 and 6 cycles respectively, these values motived the future research on CNTS thin films as alternative absorbers materials for solar cells applications. These results are comparable to the reported Ramírez et al for sprayed Cu 2 ZnSnS 4[36], also, Ghediya et al for CCTS absorber materials deposited by dip-coating technique[37] and Elsaeedy for CNTS absorber layers deposited by spray pyrolysis method[14].…”

supporting

confidence: 89%

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

Ziti

Hartiti

Belafhaili

et al. 2021

Preprint

View full text Add to dashboard Cite

Quaternary semiconductor Cu2NiSnS4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu2NiSnS4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented. Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm− 1. EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 104 cm− 1, Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω cm)-1. These characteristics are suitable for solar cells applications.

show abstract

supporting

confidence: 89%

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

Ziti

Hartiti

Belafhaili

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…deposited at 4, 5 and 6 cycles respectively, these values motived the future research on CNTS thin films as alternative absorbers materials for solar cells applications. These results are comparable to the reported Ramírez et al for sprayed Cu 2 ZnSnS 4[36], also, Ghediya et al for CCTS absorber materials deposited by dip-coating technique[37] and Elsaeedy for CNTS absorber layers deposited by spray pyrolysis method[14].…”

supporting

confidence: 89%

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

Ziti

Hartiti

Belafhaili

et al. 2021

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Quaternary semiconductor Cu 2 NiSnS 4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu 2 NiSnS 4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented.Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm -1 . EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 10 4 cm -1 , Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω. cm) −1 . These characteristics are suitable for solar cells applications.

show abstract

“…The values are found to match with the previous literature. [47][48][49][50] As per the earlier reports, the Raman peak at 338 cm À1 corresponds to tetragonal kesterite CZTS. [51,52] Many others have reported the characteristic Raman peak for CZTS also at 330 cm À1 and suggested that the difference in the peak position is due to the lattice disorder caused by nonstoichiometry and the presence of internal stress in the material.…”

Section: Raman Studiessupporting

confidence: 74%

“…[51,52] Many others have reported the characteristic Raman peak for CZTS also at 330 cm À1 and suggested that the difference in the peak position is due to the lattice disorder caused by nonstoichiometry and the presence of internal stress in the material. [47][48][49][50] It is possible that due to the high concentration of intrinsic structural defects caused by local inhomogeneities, there exists a high degree of disorder in the cation sublattice [47,49,50,53] and the same is reflected as the variation in the Raman peak position. However, both kesterite CZTS nanocrystals (NCs) [34] with the A 1 mode Raman peak at 337 cm À1 and disordered kesterite CZTS [54,55] with the Raman peak around 330 cm À1 are reported to show good PEC activity.…”

Section: Raman Studiesmentioning

confidence: 99%

Low‐Temperature‐Processed Cu₂ZnSnS₄ (CZTS)/CdS/1D‐Titania Tandem Photoanode with Effectual Photoelectrochemical Response

2021

View full text Add to dashboard Cite

A molecular precursor–based Cu2ZnSnS4 (CZTS) layer deposited at very low temperature (100 °C), without any sulfurization step, over a CdS/1D titania tandem photoanode is explored for its photoelectrochemical (PEC) application. Further, the CZTS‐based tandem photoanode is optimized by varying the composition of Cu and Zn in the molecular precursor solution. With enhanced optical absorption in the visible region and also more efficient separation of the photogenerated charge carriers, the tandem photoanode exhibits an almost 20 times higher PEC response compared to 1D TiO2, on par with the best in the relevant literature.

show abstract

Cu2ZnSnS4 films grown in one-step process by spray pyrolysis with improved properties

Cited by 13 publications

References 23 publications

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

Low‐Temperature‐Processed Cu₂ZnSnS₄ (CZTS)/CdS/1D‐Titania Tandem Photoanode with Effectual Photoelectrochemical Response

Contact Info

Product

Resources

About

Cu2ZnSnS4 films grown in one-step process by spray pyrolysis with improved properties

Cited by 13 publications

References 23 publications

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

Low‐Temperature‐Processed Cu2ZnSnS4 (CZTS)/CdS/1D‐Titania Tandem Photoanode with Effectual Photoelectrochemical Response

Contact Info

Product

Resources

About

Low‐Temperature‐Processed Cu₂ZnSnS₄ (CZTS)/CdS/1D‐Titania Tandem Photoanode with Effectual Photoelectrochemical Response