Cu2ZnSn(S,Se)4 solar cells processed by rapid thermal processing of stacked elemental layer precursors

Growth of Cu2ZnSnSe4 by cosputtering and reactive annealing atmosphere

“…Thin films were deposited at room temperature at a constant Ar gas pressure of 1 Pa. The composition of films was optimized in order to obtain Cu-poor and Zn-rich needed for high efficiency devices with the ratios Cu/(ZnþSn)¼0.8 and Zn/Sn¼1.2, according to the composition generally used for high efficiency solar cells [18,19]. The applied powers on the Cu, Zn and Sn targets were respectively 60 W, 30 W and 60 W. The deposition time was adjusted to obtain precursors thickness between 500 nm and 800 nm.…”

Controlled substitution of S by Se in reactively sputtered CZTSSe thin films for solar cells

“…There are several studies on producing CZTS thin films by depositing stacked metal layers by sputtering and post sulfurization. The latest reported power conversion efficiency for the kesterite (CZTSSe) made by rapid thermal processing of stacked elemental precursors and thermally evaporated Se (in the presence of H 2 S gas) is 6.6% [19]. The area of the device was 1.34 cm 2 .…”

Effects of a pre-annealing treatment (PAT) on Cu2ZnSn(S,Se)4 thin films prepared by rapid thermal processing (RTP) selenization

“…Additionally, the processing time is relatively short compared with the common gas-based annealing process. Although many successful studies of the RTP selenization of Se/stacked elemental precursor structures have been reported in the traditional CIGS thin-film solar cell field, to the best of our knowledge, there has been only one report that addressed the RTP selenization of Se/stacked elemental precursor structures for the newly emerging CZTSSe [29].…”