Cu wire bond parameter optimization on various bond pad metallization and barrier layer material schemes

England, Luke; Eng, Siew Tze; Liew, Chris; Lim, Hock Heng

doi:10.1016/j.microrel.2010.02.014

Cited by 23 publications

(5 citation statements)

References 5 publications

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“…These advantages of Pd promote the birth of PdCu wires. Pd coating not only solves the shortcomings of easy oxidation and high hardness of the Cu wire [ 18 ], but also prolongs its shelf life, broadens the bonding window of the second solder joint, and improves corrosion resistance and reliability [ 19 , 20 , 21 , 22 , 23 , 24 ]. Therefore, palladium-coated copper (PdCu) wire has been widely used in IC packaging, audio and video transmission lines, and other electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Zhang,

Guo,

Cao

et al. 2023

Micromachines

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Wire-bonding technology is the most commonly used chip interconnection technology in microelectronic packaging. Metal bonding wire is the key material for wire bonding and plays an important role in the reliability of electronic devices. In recent years, palladium-plated copper (PdCu) bonding wire has been widely used because of its low cost, good electrical and thermal conductivity, the fact that it is not easy to oxidize, and its high reliability. Therefore, it is necessary to review its research progress. In this paper, the preparation and application of palladium-plated copper bonding wire are reviewed. Firstly, the preparation methods of electroplating, electroless plating, and direct plating are introduced. Secondly, the factors affecting the distribution of Pd in free air balls and bonding interfaces, the effect of Pd on the formation and growth of intermetallic compounds in PdCu wire, stitch bond, and reliability of PdCu wire are summarized and analyzed in the application process. Finally, its development prospect is prospected. Hopefully, this review can help readers to have a comprehensive understanding of the preparation and application of palladium-plated copper bonding wires, and can accelerate the promotion of its application in more fields in the future.

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Section: Introductionmentioning

confidence: 99%

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Zhang,

Guo,

Cao

et al. 2023

Micromachines

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“…Past research has shown that formation of excessive intermetallics at Cu-Al interface is a major contributor to failure of the wire bond accompanied by resistance increase and fracture or bond lifts [Boettcher 2011;England 2011]. Past researchers have studied the IMC growth under isothermal aging.…”

Section: Introductionmentioning

confidence: 99%

Multiphysics-modeling of corrosion in copper-aluminum interconnects in high humidity environments

Lall¹,

Luo²,

Nguyen

2015

2015 IEEE 65th Electronic Components and Technology Conference (ECTC)

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Copper aluminum interconnects are being used in automotive applications for deployment underhood, on-engine and on-transmission. Electronics is widely used for enabling safety function including lane departure warning systems, collision avoidance systems, antilock braking systems, and vehicle stability systems. Models for copper interconnect degradation are needed for life prediction modeling to ensure 10-year, 100,000 mile reliability for electronics in automotive applications. Small concentrations of chloride ions may diffuse towards the bond pad interface under temperature, humidity, and electrical bias. The chloride ions may act as a catalyst breaking down the passivation layer of aluminum pad and accelerate the micro-galvanic corrosion at the copperaluminum leading to the failure of the wirebond. Models for prediction of the diffusion of the chloride ions and the corrosion of the copper-aluminum interface have been difficult to develop, because of the small scale of the interface and the lack of appropriate electro-chemical properties for the Cu-Al system and the Electronic Molding Compounds under conditions relevant to operation. In this effort, a multiphysics model for electrolytic corrosion in the presence of chloride has been presented. The contaminant diffusion along with the corrosion kinetics has been modeled. In addition, contaminated samples with known concentration of KCl contaminant have been subjected to the temperature humidity conditions of 130°C/100RH. The resistance of the Cu-Al interconnects in the PARR test have been monitored periodically using resistance spectroscopy. The diffusion coefficients of chloride ion has been measured in the electronic molding compound at various temperatures using two methods including diffusion cell and inductively coupled plasma (ICPMS). Moisture ingress into the EMC has been quantified through measurements of the weight gain in the EMC as a function of time. Tafel parameters including the open circuit potential and the slope of the polarization curve has been measured for both copper, aluminum under different concentrations of the ionic species and pH values in the EMC. The measurements have been incorporated into the COMSOL model to predict the corrosion current at the Cu-Al bond pad. The model predictions have been correlated with experimental data.978-1-4799-8609-5/15/$31.00 ©2015 IEEE

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“…During the silver alloy wire bonding process, silver alloy properties (such as coefficient of heat conductivity, anti-oxidation performance and mechanical properties) affect the free air ball shape and bonding strength. In addition, the intermetallic compounds and failure mold of silver alloy bonding wire and Cu/Au wire are different [12][13][14][15][16]. Moreover, the types of intermetallic compounds in high temperature and high humidity environment of silver alloy bonding wire are unclear.…”

Section: Introductionmentioning

confidence: 99%

Effect of silver alloy bonding wire properties on bond strengths and reliability

Cao

Fan²,

Liu

et al. 2015

2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC)

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In the study, the effect of silver alloy bonding wire properties on bonding strength was evaluated and the IMCs layer growth under these conditions was also discussed. It was found that the Zn elements in silver alloy bonding wire can decrease the coefficient of heat conductivity, the coefficient of heat conductivity is smaller 16%, and avoid to form golf ball and sharp ball. Long HAZ length will cause the ball neck crack and lead to black bonded or failure bonded, Zn elements can increase the recrystallized temperature, then decrease the HAZ length, the HAZ length decreased 25%. After HTS test, cracks phenomenon happens at the bonding interface because of Ag atoms rapidly migrate, Zn can decrease the Ag migrate rate and avoid the crack in bonded interface.

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Cu wire bond parameter optimization on various bond pad metallization and barrier layer material schemes

Cited by 23 publications

References 5 publications

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Research Progress of Palladium-Plated Copper Bonding Wire in Microelectronic Packaging

Multiphysics-modeling of corrosion in copper-aluminum interconnects in high humidity environments

Effect of silver alloy bonding wire properties on bond strengths and reliability

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