Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallization

A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling

“…[11][12][13][14] It is based on the idea that the BD process is strictly connected to the charge transport mechanism and is considered to be assisted by pre-existing defects, whose density is relatively high in these materials (this is true also for other dielectrics, e.g., high-k). TDDB dependence on the field follows that of Poole-Frenkel or Schottky conduction (which is considered to be the dominant charge transport mechanism)…”

“…[11][12][13][14] Each of these models explains some of the experimentally observable trends (i.e., field/voltage and temperature dependencies and Weibull statistics) of the time to BD (t BD ), which is the amount of time that the dielectric film can sustain a constant voltage stress without losing its insulating properties. However, these models are either empirical or based on over-simplified physical descriptions that do not properly address the microscopic complexity of the bondbreaking process, which can be locally affected by charge carriers, adjacent defects, and statistical variations of the bond properties.…”

Integration of Low‐ k Dielectric Films in Damascene Processes

“…A plasma treatment (e.g., NH 3 ) can reduce potentially existing copper oxide (CuO) at the metal line surface after CMP [67,68] and consequently enhance adhesion and electromigration lifetimes. However, as described in Figure 5.8(a), after a metal level is completed (i.e., after the Cu CMP process), the low-k dielectric between the metal lines is exposed (in the case where not dielectric HM has been used).…”

Backend dielectric breakdown dependence on linewidth and pattern density

“…Electric field enhancement has been previously postulated as the source of TDDB degradation for narrow lines [3]. Hence, the electric field distribution was investigated using finite element analysis.…”