2023
DOI: 10.1038/s41528-023-00237-4
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Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology

Abstract: The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned device shows similar performance to the EBL patterned device.The impact of the lithographic processes in t… Show more

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Cited by 11 publications
(1 citation statement)
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“…The overall water splitting of a general electrolyzer consisting of the anode and cathode is driven electrically, but the PV-EC devices are distinguished from it as a type of solar water splitting. Many PV-EC studies have been conducted using various photovoltaic cells such as Si, 28,29 GaAs, 30,31 CZTSSe, 32,33 GIGS, 34,35 organic, 36,37 and dyesensitized solar cells. 38,39 This review covers halide perovskite solar cell-based PV-EC devices as the main content.…”
Section: Halide Perovskite Photovoltaicsmentioning
confidence: 99%
“…The overall water splitting of a general electrolyzer consisting of the anode and cathode is driven electrically, but the PV-EC devices are distinguished from it as a type of solar water splitting. Many PV-EC studies have been conducted using various photovoltaic cells such as Si, 28,29 GaAs, 30,31 CZTSSe, 32,33 GIGS, 34,35 organic, 36,37 and dyesensitized solar cells. 38,39 This review covers halide perovskite solar cell-based PV-EC devices as the main content.…”
Section: Halide Perovskite Photovoltaicsmentioning
confidence: 99%