Cu Electrodeposition on Resistive Substrates in Alkaline Chemistry: Effect of Current Density and Wafer RPM

Armini, Silvia

doi:10.1149/1.3576121

Cited by 24 publications

(20 citation statements)

References 24 publications

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“…Although such processes are always inherent in film growth, separating the two allows a greater level of control over the growth dynamics and the effected product. [62][63][64] The AA-AP CVD method also reduces the minimum thickness required to obtain a continuous film (i.e. The AA-AP CVD process involves surface-assisted crystal nucleation whereby nucleation is initiated at the surface steps or facets of the seed crystal/layer followed by lateral growth.…”

Section: Film Synthesismentioning

confidence: 99%

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

et al. 2015

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We report on the seeded growth of fluorine doped tin oxide (FTO) polycrystalline transparent conducting oxide (TCO) thin films on float glass using a novel two-step chemical vapour deposition (CVD) method. Aerosol-assisted CVD (AACVD) was used to grow a seed layer to direct and promote full film growth via an atmospheric pressure CVD (APCVD) overlay. The method allowed for reproducible control over morphology and denser, rougher, higher-performing TCO at a relatively low growth temperature (500 1C). Growth promotion depended on seeding time with an optimal seeding time being present, below which morphology control and conformal coverage was unavailable. The film properties and functional characteristics were characterised by SEM, AFM, XRD, XPS, UV-Vis-Near IR transmittancereflectance and Hall Effect probe measurements. Highly transparent and electrically conductive films, comparable to commercial materials and with high roughness and low transmission haze values indicate the process yields high quality films with a controllable morphology that can be tuned to desired application. The versatile method provides a route towards the morphological control of high-quality FTO thin films with high optical clarity and low-emissivity properties and can be readily extended to a variety of different substrates and metal oxide materials. Fig. 7 Illustrative F-1s XPS sputtered depth profile spectra representative of FTO films formed at various AACVD seed -APCVD overlay times (A), XPS calculated F-1s binding energy positions (B), fluorine dopant concentration (C) and illustrative Sn-3d surface scan (D).

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Section: Film Synthesismentioning

confidence: 99%

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

et al. 2015

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“…Therefore, the quality of the growing metal coating is easily optimized. The current density was an important parameter affecting the electrochemical deposition reaction, 24 it provided theoretical basis for the timely deposition of metal cations in the electrolyte when it was in a high current density (60 A/dm 2 ). Of course, it provided a better reaction foundation for the sufficient reaction of metal ions in the electrolyte, due to the high-speed flow of the electrolyte, and confirmed that the high-speed jet process was more suitable for electrodeposition at high current density.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Ni coating on NdFeB by magnetic jet electrodeposition

Jiang

Shen

Qiu

et al. 2018

Proceedings of the Institution of Mechanical Engineers, Part B:

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In order to lengthen the lifespan of NdFeB materials, nickel coating was manufactured by magnetic jet electrodeposition. The surface morphology, coating adhesion, and corrosion resistance of the coating were characterized and analyzed, respectively, by scanning electron microscope, scratch tester, and electrochemical workstation. The experimental results show that the surface of nickel coating which was fabricated by magnetic jet electrodeposition had no nodularity, and as a result, the surface morphology improved; furthermore, the corrosion resistance and coating adhesion of the coating improved in the effect of magnetic field intensity. When the value of the current density was 60 A/dm2 and the intensity of magnetic field was 100 mT, the coating adhesion could reach the standard in 33.4 N, which was doubled compared to the coating without magnetic field. Corrosion of the coating morphology is no longer the regional corrosion. Magnetic field is beneficial to improve the quality of coating surface morphology and reduce the corrosion current density of the coating.

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“…The above analysis applies only to early stages of Cu electrodeposition [9][10][11] or to scenarios in which electrodeposition leads to nucleation of discrete non-coalesced grains, which do not alter the substrate resistance considerably. [16][17][18] …”

Section: Simulations and Discussionmentioning

confidence: 99%

Analytical Model for the Current Distribution during Copper Electrodeposition on Resistive Wafers under Tafel Kinetics

Akolkar

2012

ECS Electrochemistry Letters

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Analytical model of the 'terminal effect' during copper electrodeposition onto resistive wafers under Tafel kinetics is presented. Approximate analytical expressions for the plating current density and the potential distribution in the seed layer are derived for two domains: (a) close to the wafer edge, where the current and potential variations are large; and (b) Away from the wafer edge, where the current and potential variations are relatively small. A criterion for demarcating the two domains is formulated. Analytical model predictions agree reasonably well with numerical simulations of the non-uniform current distribution observed during copper electrodeposition onto highly resistive wafers.Nano-scale copper (Cu) interconnects in microprocessors and memory devices are fabricated by electrodeposition. 1 The interconnect metallization process involves several process steps: (i) sputter deposition of a Cu diffusion barrier (e.g., TaN), (ii) sputter deposition of a thin Cu seed layer, (iii) "bottom-up" electrodeposition of Cu to achieve void-free gap-fill, and (iv) chemical mechanical polishing to remove the excess Cu overburden. These process steps are implemented on 300mm wafers using advanced equipment and tools designed to provide excellent macro-scale uniformity. However, as interconnect dimensions shrink, 2 maintaining macro-scale uniformity becomes challenging. One scenario arising from continued interconnect scaling is the need for reducing the thickness of the Cu seed layer in order to prevent pinch-off and allow enough opening for the subsequent Cu electrodeposition step. Reducing the thickness of the Cu seed layer makes the substrate resistive and worsens the 'terminal effect' during electrodeposition. For Cu seed layers less than 10nm thick, the substrate resistivity can exceed 10μ -cm corresponding to a sheet resistance above 10 /sq. Additionally, the development of novel directly plate-able barriers 3 with sheet resistance exceeding several hundred /sq introduces even bigger challenges in achieving wafer-scale uniformity during electrodeposition. Another challenge for current distribution control may arise from the proposed transition in wafer diameter from 300mm to 450mm. Thus, characterizing the current distribution during electrodeposition onto resistive wafers is critical to electrochemical reactor design and scale-up.In published literature, the current distribution on resistive electrodes has been computed by employing numerical, semi-analytical or analytical methods. 4-7 Numerical simulations, while useful in computing the current distribution in complex geometries, are not generic and therefore, not useful in characterizing the precise form of the current or potential function. Analytical models, on the other hand, are not applicable to complex geometries, but are powerful in elucidating the exact nature of dependencies of the current or potential function on the system parameters. In context of wafer metallization, current distribution has also been treated numerically and analytically. Wi...

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Cu Electrodeposition on Resistive Substrates in Alkaline Chemistry: Effect of Current Density and Wafer RPM

Cited by 24 publications

References 24 publications

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

Preparation of Ni coating on NdFeB by magnetic jet electrodeposition

Analytical Model for the Current Distribution during Copper Electrodeposition on Resistive Wafers under Tafel Kinetics

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