Cu dual damascene interconnects in porous organosilica film with organic hard-mask and etch-stop layers for 70 nm-node ULSIs

Tada, Munehiro; Harada, Y.; Hijioka, K.; Ohtake, Hiroto; Takeuchi, T.; Saito, Shinobu; Onodera, T.; Hiroi, Masayuki; Furutake, N.; Hayashi, Y.

doi:10.1109/iitc.2002.1014872

Cited by 12 publications

(12 citation statements)

References 1 publication

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“…AC conductivity s ac is the ac conductivity of the sample that arises from the motion of charge carriers through the polymer and is calculated using the equation 38,39 s ac~( d Ã G s )=A (4) where d is the film thickness, A is the effective crosssectional area and G s is measured conductance. The variation of ac conductivity with applied frequencies of various weight percentages of ZnO loaded in PVA is shown in Fig.…”

Section: Dielectric Lossmentioning

confidence: 99%

Influence of zinc oxide nanoparticles on structural and electrical properties of polyvinyl alcohol films

Rashmi¹,

Raizada

Madhu

et al. 2014

Plastics, Rubber and Composites

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This study has been conducted with the objective of investigating the effects of zinc oxide nanoparticles on the structural and electrical properties of polyvinyl alcohol films. The fabricated nanocomposites were characterised by Fourier transform infrared spectroscopy, UV-visible (vis) spectra, X-ray diffraction and SEM techniques. UV-vis spectra showed that the addition of ZnO nanoparticles did not affect the absorbance in the visible region of nanocomposites. The SEM image showed that ZnO nanoparticles were homogeneously dispersed throughout the entire film's polymeric matrix. The dielectric properties were found to be strongly dependent on frequency and nanofiller content. AC conductivity s ac of polyvinyl alcohol/ZnO nanocomposites increased with increasing frequency. The dissipation factor tan d also increased with nanoparticle addition and decreased with frequency. At low nanofiller concentrations, nanocomposites exhibited low dielectric values at higher frequency, thus behaving like a lossless material, making them suitable for utilisation in microwave applications.

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Section: Dielectric Lossmentioning

confidence: 99%

Influence of zinc oxide nanoparticles on structural and electrical properties of polyvinyl alcohol films

Rashmi¹,

Raizada

Madhu

et al. 2014

Plastics, Rubber and Composites

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“…This success of the simpler and hence, manufacturable integration with less materials and interfaces is attributed to the capability of modern dry etching tools which have controllability and uniformity across the wafer enough to support the pattern definition in the monolithic damascene scheme. Another example to show the strong dependency on the tool/material/process capability and readiness is the across-the-wafer non-uniformity of modern CMP tools which so far seem unable to support the Hard Mask Retention scheme for the use of ULK at the trench level for the 65 nm node BEOL technologies in the manufacturing phase, although a bunch of damascene schemes have been reported [18][19][20][21][22][23][24].. Thus, discussions on possibility of implementation of ULK in the 45 nm node BEOL must be made on certain assumptions about the tool capability/readiness and limitation for manufacturing [25][26][27].…”

Section: Technical Challenges To the 45 Nm Beol Processmentioning

confidence: 97%

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

Nogami

Lane²,

Fukasawa

et al. 2005

SPIE Proceedings

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This paper discusses low-k/copper integration schemes which has been in production in the 90 nm node, have been developed in the 65 nm node, and should be taken in the 45 nm node. While our baseline 65 nm BEOL process has been developed by extension and simple shrinkage of our PECVD SiCOH integration which has been in production in the 90 nm node with our SiCOH film having k=3.0, the 65 nm SiCOH integration has two other options to go to extend to lower capacitance. One is to add porosity to become ultra low-k (ULK). The other is to stay with low-k SiCOH, which is modified to have a "lower-k". The effective k-value attained with the lower-k (k=2.8) SiCOH processed in the "Direct CMP" scheme is very close to that with an ULK (k=2.5) SiCOH film built with the "Hard Mask Retention" scheme. This paper first describes consideration of these two damascene schemes, whose comparison leads to the conclusion that the lower-k SiCOH integration can have more advantages in terms of process simplicity and extendibility of our 90 nm scheme under certain assumptions. Then describing the k=2.8 SiCOH film development and its successful integration, damascene schemes for 45nm nodes are discussed based on our learning from development of the lower-k 65nm scheme. Capability of modern dry etchers to define the finer patterns, nonuniformity of CMP, and susceptibility to plasma and mechanical strength and adhesion of ULK are discussed as factors to hamper the applicability of ULK.

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“…A very high dielectric permittivity ( ε r ) ceramic such as oxide materials with pervoskite was widely used in capacitors, memory devices, power systems, and in the recent automotive industry . In general, capacitors have many applications such as filtering, alternating/direct (A/D) current conversion, termination and energy storage, and so on .…”

Section: Introductionmentioning

confidence: 99%

“…These composites generally have high dielectric permittivity ( ε r ), relatively low dielectric loss (tan δ ), and increased flexibility at different temperatures that provides the material can be tuned in all places of application. Therefore, polymeric composites with ceramic fillers have attracted considerable interest and have been widely studied because of their applications in the electronic industries, especially in the manufacturing of embedded devices .…”

Section: Introductionmentioning

confidence: 99%

A comparative study on dielectric, structure, and thermal behavior of micro‐ and nano‐sized CCTO in nylon 6,9 matrix

2015

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Calcium copper titanium oxalate CaCu3Ti4O12 (CCTO) particles as a filler with both micro‐ and nano‐sized into nylon 6,9 polymer have been investigated under structural, thermal, and dielectric properties to find that particle satisfy all the same. Micro‐sized CCTO particles (point out as mCCTO) was synthesized using solid‐state route using ball milling and nano‐sized CCTO particles (point out as nCCTO) was synthesized using complex oxalate precursor route. Fabrication of nylon 6,9/CCTO composite for both micro‐ and nano‐sized CCTO particles were employed separately into nylon 6,9 matrix and examined comparatively. The composite containing 20 vol% of nCCTO achieve 24.5 dielectric permittivity at 100 Hz in room temperature that was significantly higher than mCCTO which was 14 at the same condition. From the structural analysis, we obtained that the nCCTO was well dispersed in the matrix medium, whereas the mCCTO were also dispersed with some agglomeration that was the reason for the interaction failure between the particles and matrix material. The dielectric permittivity results obtained from this study specify that the composite containing nano‐sized CCTO particles may be suitable for energy storage devices and in the higher temperature sensor applications. POLYM. COMPOS., 38:927–935, 2017. © 2015 Society of Plastics Engineers

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Cu dual damascene interconnects in porous organosilica film with organic hard-mask and etch-stop layers for 70 nm-node ULSIs

Cited by 12 publications

References 1 publication

Influence of zinc oxide nanoparticles on structural and electrical properties of polyvinyl alcohol films

Influence of zinc oxide nanoparticles on structural and electrical properties of polyvinyl alcohol films

Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes

A comparative study on dielectric, structure, and thermal behavior of micro‐ and nano‐sized CCTO in nylon 6,9 matrix

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