2013
DOI: 10.1016/j.tsf.2012.11.046
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Cu doping effects on the electronic and optical properties of Cu-doped ZnO thin films fabricated by radio frequency sputtering

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Cited by 41 publications
(7 citation statements)
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“…To achieve uniform, high-quality Cu-doped ZnO films, sputtering has been highlighted as one of the most promising techniques. Various sputtering sources have been tested including Cu-attached Zn metal [19,[21][22][23], two separate metals [24], ZnO and metallic Cu [25,26], and pre-synthesized Cu-doped ZnO [27]. In radio frequency (RF)/direct current (DC) co-sputtering and/or sequential sputtering, the use of two separate sources has been proven to be effective [25,28].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…To achieve uniform, high-quality Cu-doped ZnO films, sputtering has been highlighted as one of the most promising techniques. Various sputtering sources have been tested including Cu-attached Zn metal [19,[21][22][23], two separate metals [24], ZnO and metallic Cu [25,26], and pre-synthesized Cu-doped ZnO [27]. In radio frequency (RF)/direct current (DC) co-sputtering and/or sequential sputtering, the use of two separate sources has been proven to be effective [25,28].…”
Section: Introductionmentioning
confidence: 99%
“…In radio frequency (RF)/direct current (DC) co-sputtering and/or sequential sputtering, the use of two separate sources has been proven to be effective [25,28]. This approach has resulted in a decrease in crystal orientation [22], shrinkage of lattice constants [22,27], reduction in band gap [23,28], and broadening of Raman peaks [23,24]. In these previous reports, however, the diverse processing parameters were not controlled; only the sputtering ratio of the two sources has been considered using single-step sputtering.…”
Section: Introductionmentioning
confidence: 99%
“…The II-VI compound semiconductor zinc oxide (ZnO) is one of the promising materials for both optoelectronic and microelectronic due to its properties such as wide band gap (3.37 eV) in the near UV spectral region, high conductivity and large exciton binding energy of 60 meV at room temperature [1][2][3][4][5]. In order to enhance these properties ZnO should be doped with various dopants.…”
Section: Introductionmentioning
confidence: 99%
“…The lattice parameter of the calcined sample (Figure 9(a)) shows that it reduces with Cu doping and it enhances linearly with Cu concentration. This also proved indirectly that the Cu 2+ was substituted into ZnO lattice [35].The c/a ratio shows the hexagonal structure of ZnO is not effected by Cu doping as well as with changing concentration. The volume of the unit cell was calculated by using the equation [36].…”
Section: Effect Of Calcination Temperature On Structural Parametersmentioning
confidence: 72%